Zobrazeno 1 - 10
of 362
pro vyhledávání: '"Wintersberger, E."'
Autor:
Hrauda, N., Zhang, J. J., Wintersberger, E., Etzelstorfer, T., Stangl, J., Carbone, D., Biasotto, C., Jovanovic, V., Nanver, L. K., Moers, J., Grützmacher, D., Bauer, G.
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional d
Externí odkaz:
http://arxiv.org/abs/1011.3978
Autor:
Pezzoli, F., Bonera, E., Grilli, E., Guzzi, M., Sanguinetti, S., Chrastina, D., Isella, G., von Känel, H., Wintersberger, E., Stangl, J., Bauer, G.
Publikováno v:
In Materials Science in Semiconductor Processing 2008 11(5):279-284
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B May 2006 246(1):35-38
Autor:
Pezzoli, F., Grilli, E., Guzzi, M., Sanguinetti, S., Chrastina, D., Isella, G., von Känel, H., Wintersberger, E., Stangl, J., Bauer, G.
Publikováno v:
In Materials Science in Semiconductor Processing 2006 9(4):541-545
Publikováno v:
In Thin Solid Films 2006 508(1):213-217
Autor:
Pezzoli, F., Martinelli, Lucio, Grilli, E., Guzzi, M., Sanguinetti, S., Bollani, M., Chrastina, H.D., Isella, G., Känel, H. von, Wintersberger, E., Stangl, J., Bauer, G.
Publikováno v:
In Materials Science & Engineering B 2005 124:127-131
Autor:
Chrastina, D., Isella, G., Bollani, M., Rössner, B., Müller, E., Hackbarth, T., Wintersberger, E., Zhong, Z., Stangl, J., von Känel, H.
Publikováno v:
In Journal of Crystal Growth 2005 281(2):281-289
Autor:
Pezzoli, F., Bonera, E., Grilli, E., Guzzi, M., Sanguinetti, S., Chrastina, D., Isella, G., von Känel, H., Wintersberger, E., Stangl, J., Bauer, G.
Publikováno v:
Journal of Applied Physics; May2008, Vol. 103 Issue 9, p093521, 4p, 3 Charts, 3 Graphs
Autor:
Klucky, B.1, Wintersberger, E.1 erhard.wintersberger@meduniwien.ac.at
Publikováno v:
Oncogene. 9/20/2007, Vol. 26 Issue 43, p6356-6360. 5p. 1 Black and White Photograph, 2 Graphs.
Autor:
PEZZOLI, FABIO, BONERA, EMILIANO, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, SANGUINETTI, STEFANO, Chrastina, D, Isella, G, Kaenel, H, Wintersberger, E, Stangl, J, Bauer, G.
A procedure for the quantitative measurement of composition and strain in epitaxial Si1-xGex/Si heterostructures by means of Raman spectroscopy for any Ge concentration is presented. The calibration of the parameters of this procedure involved the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7a75b24121a550f388a238d1f3ff101c
http://hdl.handle.net/11311/517891
http://hdl.handle.net/11311/517891