Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Winston Shue"'
Autor:
M.H. Lee, Winston Shue
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper examines the challenges facing current copper damascene interconnect and the possible technologies to extend it. In addition, various novel materials are reviewed for their potential application in future interconnect.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8122471245e014465ce8a359dc655c
https://doi.org/10.1109/iedm13553.2020.9372053
https://doi.org/10.1109/iedm13553.2020.9372053
Autor:
Winston Shue, Y.J. Lu, W.C. Chiou, C.H. Yu, Y.C. Lin, M. F. Chen, T.D. Wang, C.L. Yu, H.P. Hu, H.J. Tu, M.H. Tseng, K.M. Ching, Ding-Yuan Chen, Hun-Hsien Chang, C.S. Hsu, Ching-Wen Hsiao, W.J. Wu, Kuo-Nan Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
High density through-silicon-via (TSV) and cost-effective 3D die-to-wafer integration scheme are proposed as best-in-class foundry solutions for high-end CMOS chips at 28 nm node and beyond. Key processes include: TSV formation, extreme thinning of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362f97b7166362d453ce3ad4c60d7950
https://doi.org/10.1109/iedm.2009.5424350
https://doi.org/10.1109/iedm.2009.5424350
Autor:
H.W. Su, Winston Shue, M.H. Tsai, C.H. Yu, T. Ko, S.W. Chou, J.J. Huang, M.S. Liang, C.H. Peng, C.J. Lin, C.H. Chen, C.H. Hsieh, C.H. Shih
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Direct electro-deposition of a highly conformal and adherent Cu seed on ALD TaN by means of electro-grafting technique is presented. Both the adhesion of Cu seed to the underlying ALD TaN and EM lifetime performance were greatly enhanced by electro-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f96cf8ae6bbf7787d91387797d69d21c
https://doi.org/10.1109/iedm.2004.1419149
https://doi.org/10.1109/iedm.2004.1419149
Autor:
J.C. Lin, C.L. Huang, C.L. Chang, Winston Shue, M.S. Liang, C.H. Hsieh, M.W. Lin, M.H. Tsai, C.H. Peng
Publikováno v:
Digest. International Electron Devices Meeting.
As the device dimension continues to shrink, the need for a thinner barrier for copper has risen in order to meet the requirements for future device performance. The conventional barrier process by physical vapor deposition (PVD) has the limitation t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017ecdabdf8541bee814b763f1c014cc
https://doi.org/10.1109/iedm.2002.1175913
https://doi.org/10.1109/iedm.2002.1175913