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pro vyhledávání: '"Winka, Anders"'
Autor:
Deuschle, Leonard, Cao, Jiang, Ziogas, Alexandros Nikolaos, Winka, Anders, Maeder, Alexander, Vetsch, Nicolas, Luisier, Mathieu
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced s
Externí odkaz:
http://arxiv.org/abs/2412.12986
Autor:
Winka, Anders
In this master thesis, a 2D device simulator run on a hybrid classical-quantum computer was developed. The simulator was developed to treat statistical quantum effects such as quantum tunneling and quantum confinement in nanoscale transistors. The si
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-489129
The sensitivity of two operational output parameters, criticality and isotopic composition during burnup, to specific design and operational reactor parameters in a Sodium Cooled Fast Reactor, is investigated. The computational simulation tool Serpen
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-413073