Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Wing-kei Yu"'
Publikováno v:
ISCA
Large register files are common in highly multi-threaded architectures such as GPUs. This paper presents a hybrid memory design that tightly integrates embedded DRAM into SRAM cells with a main application to reducing area and power consumption of mu
Publikováno v:
The Journal of Chemical Physics. 121:1350-1356
Absolute partial and total cross sections for electron-impact ionization of CCl4 and CCl2F2 are reported for electron energies from threshold to 1000 eV. The product ions are mass analyzed using a time-of-flight mass spectrometer and detected with a
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
This paper provides detailed characterizations of physical sources behind Flash memory based Physical Unclonable Functions (FPUFs). Universal process variations in Flash physical systems are identified and decomposed into layout, intrinsic, stress an
Publikováno v:
IEEE Symposium on Security and Privacy
This paper introduces a novel information hiding technique for Flash memory. The method hides data within an analog characteristic of Flash, the program time of individual bits. Because the technique uses analog behaviors, normal Flash memory operati
Publikováno v:
IEEE Symposium on Security and Privacy
We demonstrate that unmodified commercial Flash memory can provide two important security functions: true random number generation and digital fingerprinting. Taking advantage of random telegraph noise (a type of quantum noise source in highly scaled
Publikováno v:
DSN Workshops
We present a non-volatile processor architecture where its entire state can be almost instantly stored and restored in a non-volatile fashion. This capability is attractive for embedded or mobile devices in highly energy constrained environments. The
Autor:
Pravin Prabhu, Laura M. Grupp, G. Edward Suh, Akel Ameen D, Edwin C. Kan, Steven Swanson, Wing-kei Yu
Publikováno v:
Trust and Trustworthy Computing ISBN: 9783642215988
TRUST
TRUST
We evaluate seven techniques for extracting unique signatures from NAND flash devices based on observable effects of process variation. Four of the techniques yield usable signatures that represent different trade-offs between speed, robustness, rand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa42ffa42e94a2cdf73b7f274efd5eed
https://doi.org/10.1007/978-3-642-21599-5_14
https://doi.org/10.1007/978-3-642-21599-5_14
Publikováno v:
SoCC
This paper presents a new nonvolatile SRAM design that incorporates low-voltage nanocrystal PMOS Flash transistors. The design enables global store, restore and erase operations with negligible penalty on regular SRAM operation. Store/erase operation
Publikováno v:
AIP Conference Proceedings.
Absolute partial and total cross sections for electron‐impact ionization of CCl4 and CCl2F2 are reported for electron energies from threshold to 1000 eV. The product ions are mass analyzed using a time‐of‐flight mass spectrometer and detected w
Publikováno v:
Physical Review A. 71
Absolute differential cross sections are reported for electron capture and loss by 1-5 keV H atoms incident on CO and CO{sub 2} for laboratory scattering angles up to 1.73 deg., and for charge transfer of 1-5 keV H{sup +} with CO and CO{sub 2} for sc