Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Wim de Boeij"'
Autor:
Bart Smeets, Paul Aben, Friso Klinkhamer, Jean Philippe van Damme, Bart Paarhuis, Raaja Ganapathy Subramanian, Mohamed El Kodadi, Stefan Lichiardopol, Alberto Pirati, Peter Vanoppen, Wim de Boeij
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c06189dcc1c7f02defe6bd46bd9581a
https://doi.org/10.1117/12.2657952
https://doi.org/10.1117/12.2657952
Autor:
Friso Klinkhamer, Bart Smeets, Theo Thijssen, Francis Fahrni, Wim de Boeij, Mohamed El Kodadi, Thilo Pollak, Wolfgang Emer
Publikováno v:
Optical and EUV Nanolithography XXXV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6290d06c423ea1d4b969f3a14504ff70
https://doi.org/10.1117/12.2614031
https://doi.org/10.1117/12.2614031
Autor:
Wim de Boeij, Geert Hofmans, Hoite Pieter Theodoor Tolsma, Axel von Sydow, Bart Dinand Paarhuis, Martijn Houben, Aditya Deshpande
Publikováno v:
Optical Microlithography XXXIV.
In this paper we present the key enhancements incorporated in the new NXT platform and also share future development steps enabled by the platform. These innovations build on driving the system productivity while in parallel improving the overlay per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8eb61ac97ca1109768b4a28a36faed
https://doi.org/10.1117/12.2584494
https://doi.org/10.1117/12.2584494
Autor:
Wim Bouman, Francis Fahrni, Wim de Boeij, Wolfgang Emer, Bernd Thüring, Thilo Pollak, Friso Klinkhamer
Publikováno v:
Optical Microlithography XXXIII.
Even with the large-scale adaption of EUV Lithography to High Volume Manufacturing, numerous device-critical product layers will still be exposed with Immersion Lithography Technology and therefore ZEISS and ASML keep investing in the next generation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43df687882430f506c386627e826f01c
https://doi.org/10.1117/12.2552063
https://doi.org/10.1117/12.2552063
Autor:
Young Ha Kim, Haico Victor Kok, Byeong Soo Lee, Jeongjin Lee, Christopher J. Mason, Richard Droste, Young Seog Kang, Igor Matheus Petronella Aarts, Roelof de Graaf, Wim de Boeij, Hyunwoo Hwang, Bart Dinand Paarhuis, Jeong Heung Kong, Stefan Weichselbaum
Publikováno v:
SPIE Proceedings.
Overlay is one of the key factors which enables optical lithography extension to 1X node DRAM manufacturing. It is natural that accurate wafer alignment is a prerequisite for good device overlay. However, alignment failures or misalignments are commo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee80f8c6c80425c6ff7fd047aa3ad941
https://doi.org/10.1117/12.2220587
https://doi.org/10.1117/12.2220587
Autor:
Matthew McLaren, Roelof de Graaf, Stefan Weichselbaum, Bert Koek, Richard Droste, Wim de Boeij
Publikováno v:
SPIE Proceedings.
Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20345c6751e8e015989dd801f21a91f9
https://doi.org/10.1117/12.2220589
https://doi.org/10.1117/12.2220589
Autor:
Wim de Boeij, Bart van Bussel, Young Ha Kim, Wim Bouman, Young Seog Kang, Roelof de Graaf, Jong Hoon Jang, AJ Arij Rijke, Chansam Chang, Richard Droste, Patrick Neefs, Jeong-Heung Kong, ByeongSoo Lee, Stefan Weichselbaum
Publikováno v:
SPIE Proceedings.
Adjustment and control of the illumination pupil asymmetry is relevant for wafer alignment and overlay of lithography tools. Pupil asymmetries can cause a tilt in aerial image (Aerial Image Tilt, or AIT). This AIT, combined with a focus offset, leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d2a62cbae2bb86c11f34fa3481aaf32
https://doi.org/10.1117/12.2220588
https://doi.org/10.1117/12.2220588
Autor:
Toine de Kort, Matthew McLaren, Wim de Boeij, Roelof de Graaf, Stefan Weichselbaum, Frank Bornebroek, Herman Botter, Rob van Ballegoij, Richard Droste
Publikováno v:
SPIE Proceedings.
Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NX
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e6b430b2275a1c6c29ca7d9f7b837d6
https://doi.org/10.1117/12.2087112
https://doi.org/10.1117/12.2087112
Autor:
Wim de Boeij, Par Broman, Marjan Leonardus Catharina Hoofman, Joost Smits, Jan-Jaap Kuit, Matthew McLaren, Roelof de Graaf, Haico Victor Kok, Martijn Leenders, Remi Pieternella, Igor Bouchoms
Publikováno v:
SPIE Proceedings.
In this paper we report on the performance enhancements on the NXT immersion scanner platform to support the immersion lithography roadmap. We particular discuss scanner modules that enable future overlay and focus requirements. Among others we descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a2839e86295ff8aad6eda7f752827
https://doi.org/10.1117/12.2021397
https://doi.org/10.1117/12.2021397
Autor:
David Ockwell, Frank Bornebroek, Hans Meiling, Noreen Harned, Peter Kűrz, Ivo de Jong, Rudy Peeters, Ron Kool, Stuart Young, Martin Lowisch, Judon Stoeldraijer, Christian Wagner, Wim de Boeij, Henk Meijer, Eelco van Setten
Publikováno v:
SPIE Proceedings.
ASML's NXE platform is a multi-generation TWINSCAN™ platform using an exposure wavelength of 13.5nm, featuring a plasma source, all-reflective optics, and dual stages operating in vacuum. The NXE:3100 is the first product of this NXE platform. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246ab0dc9536cc28ccd35294100d64c2
https://doi.org/10.1117/12.916971
https://doi.org/10.1117/12.916971