Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Wim Tjibbo Tel"'
Autor:
Jinsun Kim, Seung Yoon Lee, Peter Nikolsky, Wim Tjibbo Tel, Jin-Ho Lee, Koen Thuijs, Hyun-Woo Yu, Yuxiang Yin, Sunyoung Yea, Kim Sang-Uk, Denis Ovchinnikov, Harm Dillen, Jeongjin Lee, Young-Hoon Song, Jae-Seung Jeong, Yun-A Sung, Kaustubh Padhye, James Lee, Antonio Corradi, Joon-Soo Park, Isabel de la Fuente Valentin, Miao Wang, Marc Kea, Daan Slotboom, Vadim Timoshkov, Daniel Park, Jin-Woo Lee, Rhys Su, Chan Hwang, Sun Wook Jung, Oh-Sung Kwon
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
In leading edge patterning processes, overlay is now entangled with CD including OPC residuals and stochastics. This combined effect is a serious challenge for continued shrink and can be characterized with an Edge Placement Error (EPE) budget contai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdbd77fee19202d45a735455ed8ea97a
https://doi.org/10.1117/12.2551997
https://doi.org/10.1117/12.2551997
Autor:
C. Prentice, O. Mermet, Stefan Hunsche, D. Tien, S. Desmoulins, Wim Tjibbo Tel, Fuming Wang, P. Tang, B. Le-Gratiet, C. Gardin, Ton Kiers, Y. Wang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Over the past few years, patterning edge placement error (EPE), which combines information on variability of pattern sizes and placement between adjacent device layers, has been established as the key metric for patterning budget generation and holis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a8b5837b3ac36220862f915c1770e3
https://doi.org/10.1117/12.2515242
https://doi.org/10.1117/12.2515242
Autor:
Minsung Hyun, Cees Lambregts, Nang-Lyeom Oh, Jae-Wuk Ju, Jun-Hyung Lee, Wim Tjibbo Tel, Peter G. van Rhee, Paul Böcker, Elliott McNamara, Hyun-Sok Kim, Johan Kim, Young-Sik Kim
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Computational metrology has been proposed as the way forward to resolve the need for increased metrology density, resulting from extending correction capabilities, without adding actual metrology budget. By exploiting TWINSCAN based metrology informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292f6f3388c9432f9db79ab27b5e77db
https://doi.org/10.1117/12.2297182
https://doi.org/10.1117/12.2297182
Autor:
Jan Mulkens, Michael Kubis, Hu Xuerang, Mark John Maslow, Eric Ma, Harm Dillen, Wim Tjibbo Tel, Kevin Chou, Bram Slachter, Paul Christiaan Hinnen, Xuedong Liu, Weiming Ren, Kevin Liu, Fei Wang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f547774b522ea1b6850b32e8908e9156
https://doi.org/10.1117/12.2297283
https://doi.org/10.1117/12.2297283
Autor:
Mark John Maslow, Michael Kubis, Chris Spence, Jan Mulkens, Michael Hanna, Bram Slachter, Vadim Timoshkov, Wim Tjibbo Tel
Publikováno v:
SPIE Proceedings.
In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c91611601e331d1d52963069bde6e2b
https://doi.org/10.1117/12.2260155
https://doi.org/10.1117/12.2260155
Autor:
T. Hasan, Patrick Wong, Bart Segers, Wim Tjibbo Tel, Youping Zhang, C. Prentice, Roy Anunciado
Publikováno v:
SPIE Proceedings.
In the advent of multiple patterning techniques in semiconductor industry, metrology has progressively become a burden. With multiple patterning techniques such as Litho-Etch-Litho-Etch and Sidewall Assisted Double Patterning, the number of processin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::111853375aeb25d13a83ac268294acc9
https://doi.org/10.1117/12.2257965
https://doi.org/10.1117/12.2257965
Autor:
Linmiao Zhang, Zakir Ullah, Joel Thomas, Wim Tjibbo Tel, Ravin Somasundaram, Klaus Thul, Kaustuve Bhattacharyya, Cees Lambregts, Ronald Goossens, Emil Schmitt-Weaver, Venky Subramony, Chris de Ruiter, Masazumi Matsunobu
Publikováno v:
SPIE Proceedings.
With photolithography as the fundamental patterning step in the modern nanofabrication process, every wafer within a semiconductor fab will pass through a lithographic apparatus multiple times. With more than 20,000 sensors producing more than 700GB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0bb9414af8e947cc93cddb251cb99ea
https://doi.org/10.1117/12.2258039
https://doi.org/10.1117/12.2258039
Autor:
Frank Staals, Wim Tjibbo Tel, A. Tishchenko, C. Prentice, B. Le-Gratiet, Yves Jourlin, J.-G. Simiz, Jan-Willem Gemmink, T. Hasan
Publikováno v:
SPIE Proceedings.
The concept of the multi-source focus correlation method was presented in 2015 [1, 2]. A more accurate understanding of real on-product focus can be obtained by gathering information from different sectors: design, scanner short loop monitoring, scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2350c2665a5c4e1480c2a2b60c7876
https://doi.org/10.1117/12.2219143
https://doi.org/10.1117/12.2219143
Autor:
C. Prentice, A. Tishchenko, Frank Staals, T. Hasan, Wim Tjibbo Tel, B. Le-Gratiet, J.-G. Simiz
Publikováno v:
SPIE Proceedings.
With continuing dimension shrinkage using the TWINSCAN NXT:1950i scanner on the 28nm node and beyond, the imaging depth of focus (DOF) becomes more critical. Focus budget breakdown studies [Ref 2, 5] show that even though the intrafield component sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6db9762235a770b150fb6a38d2146d
https://doi.org/10.1117/12.2194079
https://doi.org/10.1117/12.2194079
Autor:
Frank Staals, P. Gilgenkrantz, J.-G. Simiz, A. Tishchenko, Wim Tjibbo Tel, Alexandre Villaret, T. Hasan, Francois Pasqualini, B. Le-Gratiet, C. Prentice
Publikováno v:
SPIE Proceedings.
With continuing dimension shrinkage using the TWINSCAN NXT:1950i scanner on the 28nm node and beyond, the imaging depth of focus (DOF) becomes more critical. Focus budget breakdown studies [Ref 1, 5] show that even though the intrafield component sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf9fa299c1997abd0de89b88c6511cc
https://doi.org/10.1117/12.2085283
https://doi.org/10.1117/12.2085283