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Akademický článek

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Autor: Fen Xue, Shy-Jay Lin, Mingyuan Song, William Hwang, Christoph Klewe, Chien-Min Lee, Emrah Turgut, Padraic Shafer, Arturas Vailionis, Yen-Lin Huang, Wilman Tsai, Xinyu Bao, Shan X. Wang

Publikováno v: Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)

Abstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent s

Externí odkaz: https://doaj.org/article/48aff6bc59c3467985f35fc89665a5de

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Akademický článek

Field‐Induced Ferroelectric Phase Evolution During Polarization 'Wake‐Up' in Hf0.5Zr0.5O2 Thin Film Capacitors

Autor: Balreen Saini, Fei Huang, Yoon‐Young Choi, Zhouchangwan Yu, Vivek Thampy, John D. Baniecki, Wilman Tsai, Paul C. McIntyre

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)

Abstract As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. Durin

Externí odkaz: https://doaj.org/article/86bcfa2c619a4f18911bb032576450e2

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Akademický článek

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

Autor: Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 8, Pp 674-680 (2020)

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties neede

Externí odkaz: https://doaj.org/article/b33005b56c8b478d842c17dbd013fc64

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Akademický článek

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Autor: Fen Xue, Shy-Jay Lin, Peng Li, William Hwang, Yen-Lin Huang, Wilman Tsai, Shan X. Wang

Publikováno v: APL Materials, Vol 9, Iss 10, Pp 101106-101106-8 (2021)

Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for energy efficient memory and computing applications. New classes of materials such as antiferromagnets, topological insulators, and semimetals can ge

Externí odkaz: https://doaj.org/article/0480b08078054e2c934a84a7b27fc743

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