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pro vyhledávání: '"Williamson, Benjamin A.D."'
Autor:
Williamson, Benjamin A.D., Limburn, Gregory J., Watson, Graeme W., Hyett, Geoffrey, Scanlon, David O.
Publikováno v:
In Matter 2 September 2020 3(3):759-781
Autor:
Don, Christopher H., Shalvey, Thomas P., Smiles, Matthew J., Thomas, Luke, Phillips, Laurie J., Hobson, Theodore D.C., Finch, Harry, Jones, Leanne A.H., Swallow, Jack E.N., Fleck, Nicole, Thakur, Pardeep K., Lee, Tien-Lin, Biswas, Deepnarayan, Bowen, Leon, Williamson, Benjamin A.D., Scanlon, David O., Dhanak, Vinod R., Durose, Ken, Veal, Tim D., Major, Jonathan
Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter-diffusion at the interface forming Cd(S,Se) and Sb2(S, Se)3 phases,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14fff6eb5c6651c87039ccab735b7083
