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Autor:
Weidan Li, Hongqiang Lu, Hao Cui, Wei-jen Hsia, Shyam P. Murarka, Ishwara B. Bhat, Williams Lanford
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:828
In this article, methyl-doped silicon oxide films deposited using Flowfill™ chemical vapor deposition (CVD) technology have been chracterized for use in inter-layer dielectrics application. Films with different methyl concentrations were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17158ef69c0a0f64654f311e1cba082c
https://doi.org/10.1116/1.1470510
https://doi.org/10.1116/1.1470510
