Zobrazeno 1 - 10
of 11
pro vyhledávání: '"William V. McLevige"'
Autor:
D. M. Stephenson, William V. McLevige, Kadri Vural, Gary L. Bostrup, C. Y. Chen, Klaus-Werner Hodapp, Donald E. Cooper, William E. Kleinhans, Donald N. B. Hall, Robert B. Bailey, Lester J. Kozlowski, Scott A. Cabelli
Publikováno v:
SPIE Proceedings.
Rockwell Science Center and the University of Hawaii have developed a short wavelength infrared (SWIR) 1024 x 1024 focalplane array (EPA). The continuing project is funded by the U.S. Air Force Phillips Laboratory in connection with their AdvancedEle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4fa0ac0194c179807f35cba3f1a9b48
https://doi.org/10.1117/12.185846
https://doi.org/10.1117/12.185846
Autor:
Dennis E. Edwall, E. R. Gertner, J. Ellsworth, Stephen R. Hampton, William V. McLevige, A. H.B. Vanderwyck, Edward R. Blazejewski, G. M. Williams, Laura Fishman, Honnavalli R. Vydyanath
Publikováno v:
SPIE Proceedings.
`The demand for high detectivity LWIR IR focal plane arrays that operate at low backgrounds is shown to drive the HgCdTe technology toward increased detector performance. Reduced operating temperature together with advanced material technology and de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fece8b6e500a02db25d6d6697c80fd31
https://doi.org/10.1117/12.179946
https://doi.org/10.1117/12.179946
Autor:
W. E. Tennant, Kadri Vural, Scott A. Cabelli, Edward R. Blazejewski, Donald E. Cooper, William V. McLevige, Lester J. Kozlowski, A. H.B. Vanderwyck, S. L. Johnston
Publikováno v:
SPIE Proceedings.
Staring 128 X 128 hybrid HgCdTe FPAs have been demonstrated with very good sensitivity and operability at temperatures compatible with thermoelectric cooling (> 160 K). The FPAs consist of HgCdTe/sapphire (PACE-I; producible alternative to CdTe for e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db1ea9ba8ee39e7871b24c3c8e40366
https://doi.org/10.1117/12.137796
https://doi.org/10.1117/12.137796
Autor:
William V. McLevige, A. H.B. Vanderwyck, Kadri Vural, Lester J. Kozlowski, Donald E. Cooper, W. E. Tennant, Scott A. Cabelli, Edward R. Blazejewski
Publikováno v:
Optical Engineering. 33:704
Cost-effective high-performance IR imaging cameras need affordable staring focal plane arrays (FPAs) that can operate effectively at temperatures compatible with inexpensive long-life coolers. We report on staring hybrid 128 x 128 and 256 x 256 Hg1-x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d44611763887626aeecc0324a62e97c
https://doi.org/10.1117/12.163405
https://doi.org/10.1117/12.163405
Autor:
Kadri Vural, Scott A. Cabelli, Isoris S. Gergis, Gary L. Bostrup, Philip E. Howard, Donald E. Cooper, Robert B. Bailey, Lester J. Kozlowski, William V. McLevige, W. E. Tennant, Annie Chi-yi Chen
Publikováno v:
Optical Engineering. 33:54
A high-performance 5-μm 640 X 480 HgCdTe/CdTe/Al2O3 infrared focal plane array (FPA) that offers full TV-compatible resolution with excellent sensitivity at temperatures below 120 K has been developed. Mean FPA D* at 95 K and background of 1014 phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b404b0e15b0b76a7f174b3c53f4b85
https://doi.org/10.1117/12.151551
https://doi.org/10.1117/12.151551
Publikováno v:
IEEE Transactions on Industrial Electronics. :136-139
GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ec059ad712d4230b27d74974392041
https://doi.org/10.1109/tie.1982.356650
https://doi.org/10.1109/tie.1982.356650
Publikováno v:
IEEE Electron Device Letters. 8:121-123
A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f846043cefe9aeb740826e0a26e07ab
https://doi.org/10.1109/edl.1987.26573
https://doi.org/10.1109/edl.1987.26573
Autor:
V. Sokolov, William V. McLevige
Publikováno v:
IEEE Electron Device Letters. 1:156-158
The use of GaAs FETs as microwave switches is discussed, and the feasibility of such devices for applications requiring ultra low dc power consumption, low insertion loss, and bidirectionality is demonstrated. A discrete SPST switch consisting of two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f94a389dac21069751522f73713967
https://doi.org/10.1109/edl.1980.25271
https://doi.org/10.1109/edl.1980.25271
Autor:
William V. McLevige, W. M. Duncan, Hadis Morkoç, T.J. Drummond, F. H. Doerbeck, William R. Frensley, H.T. Yuan
Publikováno v:
IEEE Electron Device Letters. 3:43-45
Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0015e5a604ee700af13cd4692e6e0c
https://doi.org/10.1109/edl.1982.25471
https://doi.org/10.1109/edl.1982.25471
Publikováno v:
1986 International Electron Devices Meeting.
A functional GaAs enhancement/ deplet on (E/D) 1K-bit SRAM and other digital circuits have been fabricated in a GaAs layer grown by MBE on a silicon substrate. These are the most complex digital circuits reported to date for GaAs-on-Si material. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ac98f46a4d82b16aa4d3f7e3441686
https://doi.org/10.1109/iedm.1986.191302
https://doi.org/10.1109/iedm.1986.191302