Zobrazeno 1 - 10
of 10
pro vyhledávání: '"William T. Spratt"'
Autor:
John A. Ott, Stephen W. Bedell, Ning Li, Kevin Han, Marinus Hopstaken, William T. Spratt, Frank R. Libsch, Qinglong Li, Devendra K. Sadana
Publikováno v:
Nature Photonics. 13:588-592
Conventional light-emitting diodes (LEDs) face an efficiency droop at low current due to non-radiative recombination overtaking radiative recombination at low carrier density. To overcome this universal problem, we develop LEDs with high efficiency a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91f2929fb0c6bbe1a6c6b15c1f640a6d
https://doi.org/10.1038/s41566-019-0463-x
https://doi.org/10.1038/s41566-019-0463-x
Autor:
Devendra K. Sadana, Marinus Hopstaken, Oki Gunawan, Stephen W. Bedell, Kevin Han, Jinhan Ren, Chitra Subramanian, Frank R. Libsch, John A. Ott, Ning Li, Cyril Cabral, Ghavam G. Shahidi, William T. Spratt
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(49)
Advancement in microelectronics technology enables autonomous edge computing platforms in the size of a dust mote (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609bbba47e527f62983a358a95c01b95
https://pubmed.ncbi.nlm.nih.gov/33095497
https://pubmed.ncbi.nlm.nih.gov/33095497
Autor:
Martin M. Frank, Robert L. Bruce, Effendi Leobandung, Christian Lavoie, Michael F. Lofaro, John Bruley, Heinz Schmid, Cheng-Wei Cheng, Pouya Hashemi, John A. Ott, Christopher P. D'Emic, R. Mo, William T. Spratt, Guy M. Cohen, Sungjae Lee, Vijay Narayanan, Lukas Czornomaz, J. Patel, T. Ando, Xiao Sun, Hiroyuki Miyazoe
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We report InGaAs gate-all-around nanosheet NFETs on Si substrate using template-assisted-selective-epitaxy (TASE) and a gate-last process with thermal budget advantages. Compared to our early report of the TASE process, in this paper we demonstrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b33ec92c6ec9578e4b901be8bf900ee
https://doi.org/10.1109/iedm.2018.8614684
https://doi.org/10.1109/iedm.2018.8614684
Autor:
Kevin Han, John A. Ott, Chitra Subramanian, Frank R. Libsch, Cyril Cabral, William T. Spratt, Oki Gunawan, Stephen W. Bedell, Marinus Hopstaken, Ghavam G. Shahidi, Ning Li, Jinhan Ren, Devendra K. Sadana
Publikováno v:
Advanced Materials. 32:2070369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d335e62e309e66094d86007f07c60a76
https://doi.org/10.1002/adma.202070369
https://doi.org/10.1002/adma.202070369
Autor:
Stephen W. Bedell, Cheng-Wei Cheng, D. K. Sadana, Brent A. Wacaser, Kuen-Ting Shiu, William T. Spratt
Publikováno v:
CICC
This review focuses on material challenges associated with III-V co-integration with Si for future CMOS. There is a huge volume of literature on this topic as implementation of III-V monolithic integration with Si has been the holy grail for last fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74274c9de8dbfc2f978e20555870b258
https://doi.org/10.1109/cicc.2015.7338398
https://doi.org/10.1109/cicc.2015.7338398
Autor:
Hua Xia, Mengbing Huang, Alain C. Diebold, Lei Wang, Richard J. Matyi, Vimal K. Kamineni, Chuanlei Jia, William T. Spratt
Publikováno v:
MRS Proceedings. 1354
Due to its outstanding thermal and chemical stability, single-crystal sapphire is a crucial material for high-temperature optical sensing applications. The potential for using hydrogen ion implantation to fabricate stable, high temperature optical wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8470128e66a1572f73f8862747d5693a
https://doi.org/10.1557/opl.2011.1279
https://doi.org/10.1557/opl.2011.1279
Publikováno v:
Journal of Applied Physics. 117:123102
Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eefa8b8c151b31dfd985a800aee1bad
https://doi.org/10.1063/1.4916253
https://doi.org/10.1063/1.4916253
Autor:
Girish Malladi, Nirag Kadakia, Perveen Akhter, Hassarum Bakhru, William T. Spratt, Mengbing Huang
Publikováno v:
Journal of Applied Physics. 116:113503
This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 1017/cm2, and some of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e63999147a1f973076528b71d3da389
https://doi.org/10.1063/1.4895694
https://doi.org/10.1063/1.4895694
Publikováno v:
Journal of Applied Physics. 114:203501
The excellent material properties of single crystal sapphire fibers promise great advantages in applications related to harsh environment optical sensing, high laser power delivery, and high-resolution/sensitivity optical spectroscopy. However, the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ae493ca1c42db9f59d31858a971cd6
https://doi.org/10.1063/1.4833240
https://doi.org/10.1063/1.4833240
Autor:
Lei Wang, Vimal Kamineni, Hua Xia, Chuanlei Jia, Alain C. Diebold, Mengbing Huang, William T. Spratt
Publikováno v:
Applied Physics Letters. 99:111909
We report a study on the use of hydrogen ion implantation to form optical barriers with excellent thermal stability in single-crystal sapphire. Sapphire crystals are implanted with H ions of energies 0.2–1 MeV to doses 1016–1017 cm−2, followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cc9b23c2e42169fcf63da280925161
https://doi.org/10.1063/1.3637613
https://doi.org/10.1063/1.3637613