Zobrazeno 1 - 10
of 126
pro vyhledávání: '"William Scott Hobson"'
Publikováno v:
Handbook of Laser Technology and Applications ISBN: 9781003130123
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6625b4914e063a721cca023855ae1bde
https://doi.org/10.1201/9781003130123-27
https://doi.org/10.1201/9781003130123-27
Autor:
W. Chang, S.N.G. Chu, John Lopata, Stephen J. Pearton, G. T. Dang, William Scott Hobson, Fan Ren, B. Luo, Hongen Shen, M. Tayahi, R. Mehandru
Publikováno v:
Journal of Lightwave Technology. 21:1020-1031
Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture defini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34c13d8d165451e4e43bb7e06a980416
https://doi.org/10.1109/jlt.2003.810093
https://doi.org/10.1109/jlt.2003.810093
Autor:
John Lopata, B. Lou, Stephen J. Pearton, M. Tayahi, G. T. Dang, William Scott Hobson, S. N. G. Chu, L.M.F. Chirovsky, D.C Kilper, Fan Ren
Publikováno v:
Solid-State Electronics. 45:1639-1644
Results are presented on a lateral current injection vertical cavity surface emitting laser (VCSEL) structure, the implant apertured, index guided VCSEL (I 2 -VCSEL). This approach was previously used for 980 nm emission and has now been adapted for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1617c1a4b902ebfeb4c8b523b924aad2
https://doi.org/10.1016/s0038-1101(01)00157-5
https://doi.org/10.1016/s0038-1101(01)00157-5
Autor:
S. J. Pearton, K. P. Lee, J. Han, A. P. Zhang, J. W. Lee, Fan Ren, C. R. Abenathy, G. T. Dang, J. Lopata, William Scott Hobson
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1846-1849
A self-aligned fabrication process for small emitter contact area (2×4 μm2) GaN/AlGaN heterojunction bipolar transistor is described. The process features dielectric-spacer sidewalls, low damage dry etching, and selected-area regrowth of GaAs(C) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb39173cc88097eb2a4a00d4c414433
https://doi.org/10.1116/1.1330260
https://doi.org/10.1116/1.1330260
Autor:
Jung Han, G. T. Dang, John Lopata, J. W. Lee, A. P. Zhang, C. R. Abernathy, William Scott Hobson, Fan Ren, S. N. G. Chu, Stephen J. Pearton, K. P. Lee
Publikováno v:
Solid-State Electronics. 45:243-247
The development of a self-aligned fabrication process for small emitter contact area ( 2×4 μ m2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described. The process features dielectric-spacer sidewalls, low d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90a482feb5c9a07431692bc86de470f8
https://doi.org/10.1016/s0038-1101(01)00015-6
https://doi.org/10.1016/s0038-1101(01)00015-6
Autor:
B. Luo, Peter Chow, Fan Ren, H. Cho, D.J King, J. M. Van Hove, J. J. Klaassen, G. T. Dang, William Scott Hobson, Stephen J. Pearton, A. P. Zhang, A. M. Wowchack, Xian-An Cao, John Lopata, C. J. Polley
Publikováno v:
Solid-State Electronics. 44:2097-2100
Low resistance ohmic contacts are difficult to form on p-type GaN and AlGaN due to the relatively high ionization energy of Mg in GaN and AlGaN. A carbon-doped GaAs grown on p-GaN prior to ohmic metallization has been shown to improve contact resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1257d933cf984dbcc7ccaf2fdb900d88
https://doi.org/10.1016/s0038-1101(00)00112-x
https://doi.org/10.1016/s0038-1101(00)00112-x
Autor:
Randy J. Shul, K. B. Jung, Hyun Cho, Stephen J. Pearton, David C. Hays, Eric Lambers, William Scott Hobson, Y. B. Hahn, C. R. Abernathy
Publikováno v:
Plasma Chemistry and Plasma Processing. 20:405-415
High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144f7f56fa9141856e1bee9d95a6cf66
https://doi.org/10.1023/a:1007000613045
https://doi.org/10.1023/a:1007000613045
Autor:
Hyun Cho, David C. Hays, C. R. Abernathy, Stephen J. Pearton, Randy J. Shul, William Scott Hobson, Y. B. Hahn, Eric Lambers, K. B. Jung
Publikováno v:
Plasma Chemistry and Plasma Processing. 20:417-427
A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67cdbeceb576edad5a77392dfccf8cd
https://doi.org/10.1023/a:1007052629883
https://doi.org/10.1023/a:1007052629883
Autor:
John Lopata, S. N. G. Chu, C. R. Abernathy, G. T. Dang, A. P. Zhang, S. M. Donovan, Robert G. Wilson, William Scott Hobson, Fan Ren, Stephen J. Pearton, Xian-An Cao
Publikováno v:
Solid-State Electronics. 44:105-109
Heavily carbon-doped (p≥10 10 cm −3 ) GaAs layers were grown on p-GaN in attempt to reduce the p-ohmic contact resistance. While the specific contact resistances on the p-GaN and p-GaAs were typical of the current state-of-the-art (∼10 −3 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1444e017bbeb6c02e5a45dfb5abbddc5
https://doi.org/10.1016/s0038-1101(99)00213-0
https://doi.org/10.1016/s0038-1101(99)00213-0
Autor:
Fan Ren, Y. B. Hahn, C. R. Abernathy, Hyun Cho, Stephen J. Pearton, William Scott Hobson, K. B. Jung, David C. Hays
Publikováno v:
Applied Surface Science. 147:125-133
Selective etching of GaAs over AlGaAs and InGaP was examined in different plasma chemistries (BCl3/SF6, BCl3/NF3, IBr, ICl, BI3, and BBr3) in a high density plasma reactor. The normal etch stop reactions involving formation of involatile AlF3, InF3,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79b61e0ffbd01f282d69c094f3e31f8
https://doi.org/10.1016/s0169-4332(99)00103-8
https://doi.org/10.1016/s0169-4332(99)00103-8