Zobrazeno 1 - 10
of 120
pro vyhledávání: '"William S. Hobson"'
Autor:
C. R. Abernathy, J. Hong, Eric Lambers, Fan Ren, S. J. Pearton, C. J. Santana, J. W. Lee, William S. Hobson
Publikováno v:
Journal of Electronic Materials. 25:1428-1433
Etch rates above 1 μm min−1 are achieved for InGaP and AlInP under electron cyclotron resonance conditions in low pressure (1.5 mTorr) Cl2/Ar discharges. Much lower rates were obtained for AlGaP due to the greater difficulty of the bond breaking t
Autor:
William S. Hobson, Eric Lambers, J. W. Lee, Fan Ren, C. J. Santana, C. R. Abernathy, Stephen J. Pearton
Publikováno v:
Plasma Chemistry and Plasma Processing. 16:365-378
Electron cyclotron resonance (ECR) plasma etching with additional rf-biasing produces etch rates ≥ 2,500 A/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) car
Autor:
C. R. Abernathy, Fan Ren, C. J. Santana, J. Hong, J. W. Lee, S. J. Pearton, William S. Hobson
Publikováno v:
Semiconductor Science and Technology. 11:1218-1224
Etch rates above have been obtained for and plasma etching of , and under electron cyclotron resonance (ECR) conditions. The etched surface morphologies are a strong function of the ratio of chlorine radicals to total ion density in the discharges, a
Publikováno v:
Solid-State Electronics. 39:1095-1099
Autor:
Fan Ren, J. W. Lee, William S. Hobson, C. J. Santana, C. R. Abernathy, Stephen J. Pearton, J. Hong, Eric Lambers
Publikováno v:
Solid-State Electronics. 39:1109-1112
Autor:
William S. Hobson, J.R Lothian, Fan Ren, S. J. Pearton, J. A. Caballero, J. M. Kuo, J. Lopata
Publikováno v:
Solid-State Electronics. 39:695-698
InP, InAlP and InGaP can be etched at rates of 0.5–0.8 μm min−1 in pure BCl3 discharges at high microwave powers (1000 W). The etch rates are strong functions of focusing magnet current, microwave power, sample temperature and to the nature of a
Publikováno v:
Materials Science and Engineering: B. 38:263-266
Hydrogen passivation of Zn acceptors and Si donors in In 0.49 Ga 0.51 P layers has been examined as a function of the microwave power (0–1000 W) and process pressure (1–10 mTorr) of electron cyclotron resonance H 2 discharges. The dopant passivat
Publikováno v:
Solid-State Electronics. 38:1523-1527
An optical pumping study was carried out to measure the characteristic times governing the polarization of the photoluminescence in GaAs grown either on InP or on Si, using excitation energies close to the optical transitions. It was shown that the u
Autor:
M. Passlack, U. K. Chakrabarti, John Lopata, J.F. de Jong, C. G. Bethea, Niloy K. Dutta, William S. Hobson, D. T. Nichols, Erdmann Frederick Schubert, George J. Zydzik
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:110-116
InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (/spl lambda/=0.98 /spl mu/m) with lattice-matched InGaP cladding layers, using a new Ga/sub 2/O/sub 3/ low reflectivity (LR) front-facet coating, are reported. Th
Publikováno v:
Journal of Materials Science Materials in Electronics. 5:185-190
High-density, magnetically enhanced discharges of Cl2/CH4/H2/Ar were shown to provide rapid dry etching of InGaAsP/InP laser structures for sample temperatures of greater than 130 ‡C. The etch rates were ~1 Μm min−1, and they were more than an o