Zobrazeno 1 - 10
of 75
pro vyhledávání: '"William R. Graham"'
Publikováno v:
Surface Science. 479:136-140
The absolute saturation coverage of Cs adsorbed on the Si(1 1 1)-7×7 surface at room temperature has been measured using Rutherford backscattering spectrometry. At saturation, coverage is 0.51±0.02 monolayers (ML) where 1 ML=7.83×1014 atoms/cm2. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8fcdb5e1222d7134f51c2cd151f7e63
https://doi.org/10.1016/s0039-6028(01)00970-0
https://doi.org/10.1016/s0039-6028(01)00970-0
Autor:
William R. Graham, R. Pérez‐Sandoz, H. H. Weitering, Raymond T. Tung, R. J. Carolissen, J. P. Sullivan
Publikováno v:
Journal of Applied Physics. 79:7820-7829
We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)(√3×√3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n‐ and p‐typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8d9c6dd74d71ae5e279456330aa5d6
https://doi.org/10.1063/1.362390
https://doi.org/10.1063/1.362390
Autor:
Jorge J. Santiago-Avilés, Michael P. Siegal, Luz J. Martinez-Miranda, Paul A. Heiney, William R. Graham
Publikováno v:
Journal of Materials Research. 9:1434-1440
We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi2−x films grown on Si(111), with thicknesses ranging from 85 Å to 510 Å. These measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00989fb24659e34b66349ba9afe7721c
https://doi.org/10.1557/jmr.1994.1434
https://doi.org/10.1557/jmr.1994.1434
Autor:
William R. Graham, Jorge J. Santiago-Avilés, Michael P. Siegal, Michelle F. Siegal, Luz J. Martinez-Miranda
Publikováno v:
Journal of Applied Physics. 75:1517-1520
We present the results of an x‐ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 A. The macroscopic strain along the out‐of‐plane direction for films containing pits or pinhol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461a855e41e44c6ef6ae21fbe4fab7ce
https://doi.org/10.1063/1.356387
https://doi.org/10.1063/1.356387
Publikováno v:
Applied Surface Science. :422-427
We have measured current-voltage (IV) characteristics of Si(111)7×7-Ag, Si(111)(√3 × √3)R30°-Ag and Si(100)2 × 1-Ag interfaces, grown in ultrahigh vacuum (UHV). Our data strongly suggest that their Schottky barrier heights (SBHs) are spatiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90db94d1cee99ce9b980bf89892c891d
https://doi.org/10.1016/0169-4332(93)90553-n
https://doi.org/10.1016/0169-4332(93)90553-n
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1959-1964
The Schottky barrier height (SBH) measured at epitaxial NiSi2 contacts is shown to be strongly influenced by the local interfacial structure. Diodes with guard rings, which eliminate the edge leakage current which has hampered some previous studies,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d712b55ee35d2f0a31f07bbf10430ce
https://doi.org/10.1116/1.578010
https://doi.org/10.1116/1.578010
Publikováno v:
Journal of Applied Physics. 70:7403-7424
Numerical simulations are presented of the potential distribution and current transport associated with metal‐semiconductor (MS) contacts in which the Schottky barrier height (SBH) varies spatially. It is shown that the current across the MS contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8224a01dd37ae1911d16f7282da97099
https://doi.org/10.1063/1.349737
https://doi.org/10.1063/1.349737
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:426-429
Recent advances in heteroepitaxy have produced novel structures allowing the detailed investigation of material properties of the heterostructure components. We examine transport phenomena in 120 A thick films of the rare earth silicide TbSi2−x. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c642ea580f99e9d1b86cc38755a07f
https://doi.org/10.1116/1.577426
https://doi.org/10.1116/1.577426
Publikováno v:
Surface Science. 243:L37-L40
In this study, medium energy ion scattering has been used in conjunction with Auger electron spectroscopy and LEED to measure the saturation coverage of Cs and K on Si(100) at room temperature, for which distinct 2 × 1 surface structures are observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9a6b4a7f04d81918a9a6f7fb7eb267
https://doi.org/10.1016/0039-6028(91)90330-u
https://doi.org/10.1016/0039-6028(91)90330-u
Publikováno v:
Surface Science Letters. 243:L37-L40
In this study, medium energy ion scattering has been used in conjunction with Auger electron spectroscopy and LEED to measure the saturation coverage of Cs and K on Si(100) at room temperature, for which distinct 2 × 1 surface structures are observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d1cf492de2933323b1daccc7fe1ddf
https://doi.org/10.1016/0167-2584(91)90592-f
https://doi.org/10.1016/0167-2584(91)90592-f