Zobrazeno 1 - 10
of 194
pro vyhledávání: '"William R. Frensley"'
Autor:
Raja N. Mir, William R. Frensley
Publikováno v:
2019 14th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS).
Simulation of Electron Transport through two dimensional(2D) waveguide using Quantum Transport Boundary Method (QTBM) is done. Specifically, as an example the results of modeling L-shaped contact for a rectangular waveguide are presented. 2D-QTBM app
Autor:
William R. Frensley, Raja N. Mir
Publikováno v:
2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS).
For an N-terminal device, we can define N dimensionless functions of position by differentiating the electrostatic potential with respect to each of the terminal voltages. At any point in the device these functions sum to unity. They provide a natura
Publikováno v:
IEEE Transactions on Nanotechnology. 11:501-512
A numerical study on the operation of Si nanowire (NW) biosensors in charge-based sensing is presented. The simulation is built on physical models that, upon numerical convergence, coherently account for Fermi-Dirac, Poisson-Boltzman, site-binding an
Autor:
William R. Frensley
Publikováno v:
Journal of Computational Electronics. 7:494-499
A comprehensive set of semiconductor device simulation tools, written in Java, is being developed for instructional use. These interactive programs can be launched from an electronic textbook or from lecture presentation material. At present these to
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:709-714
In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, howev
Autor:
William R. Frensley
Publikováno v:
2015 International Workshop on Computational Electronics (IWCE).
The longstanding problem of spurious states in k·p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructe
Publikováno v:
2015 International Workshop on Computational Electronics (IWCE).
Multi-band k ⋅ p models discretized with finite difference method (FDM) have been widely used to study electronic properties of semiconductor nanostructures. However, different schemes of FDM exist in the literature, some of them are numerically un
Publikováno v:
Solid State Phenomena. :225-230
Publikováno v:
Solid State Phenomena. :219-224
Publikováno v:
IEEE Transactions on Electron Devices. 47:1052-1060
We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated