Zobrazeno 1 - 5
of 5
pro vyhledávání: '"William Po Nien Chen"'
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144086d67c7445cc820d601976e18652
https://doi.org/10.7567/ssdm.2008.b-6-4
https://doi.org/10.7567/ssdm.2008.b-6-4
Autor:
Chenhsin Lien, Carlos H. Diaz, Ken-Ichi Goto, Chih-Huang Chang, J. S. Wang, Pin Su, William Po Nien Chen
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
In this work, a simplified BSIM-based model has been proposed to solve the above issues contributed by halo implants [Goto, K, et al., 2003]. In this new methodology, Rsd and mueff can be uniquely extracted in nano-scale devices. Furthermore, the ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f26eb312cefb45072a6f4c6ee5c778
https://doi.org/10.1109/vtsa.2006.251104
https://doi.org/10.1109/vtsa.2006.251104
Publikováno v:
Journal of The Electrochemical Society. 156:H34
As strained-silicon and ultrashallow junction USJ techniques are widely used to optimize the carrier velocity and parasitic resistances in metal oxide semiconductor field effect transistors MOSFETs, an accurate determination of the parasitic source/d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5952a8bca49c7bc4846561359266930
https://doi.org/10.1149/1.3005569
https://doi.org/10.1149/1.3005569
Publikováno v:
Journal of The Electrochemical Society; 2009, Vol. 156 Issue 1, pH34-H38, 5p, 1 Diagram, 1 Chart, 11 Graphs
Autor:
Jhong-Sheng Wang, William Po-Nien Chen, Chun-Hsing Shih, Chenhsin Lien, Pin Su, Yi-Ming Sheu, Donald Yuan-Shun Chao, Ken-Ichi Goto
Publikováno v:
IEEE Electron Device Letters; Nov2007, Vol. 28 Issue 11, p1040-1043, 4p