Zobrazeno 1 - 10
of 245
pro vyhledávání: '"William N. Gill"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N175-N178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb601134197d24bfa61b40397b9deff9
https://doi.org/10.1149/2.021309jss
https://doi.org/10.1149/2.021309jss
Publikováno v:
IEEE Transactions on Electron Devices. 59:1745-1749
Assessing the lifetime of low-k dielectric materials integrated with Cu remains an important issue for interconnect reliability as designs pursue dielectric thicknesses below 100 nm. We present electrical tests and a mass transport model to assess Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a0cf7a8c699197ea352631cf7eaea2
https://doi.org/10.1109/ted.2012.2190074
https://doi.org/10.1109/ted.2012.2190074
Publikováno v:
IEEE Transactions on Electron Devices. 58:4354-4360
Varying the voltage ramp rate during conventional I-V testing allows one to distinguish between metals that react with the surface of a dielectric or barrier (Al), metals that react and can be injected into the dielectric or barrier (Cu), and metals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ef931628b1d276d9df89e5ee196bd4
https://doi.org/10.1109/ted.2011.2168228
https://doi.org/10.1109/ted.2011.2168228
Publikováno v:
Journal of Materials Science: Materials in Electronics. 23:48-55
Copper solubility in low-k dielectrics has been shown to be a major factor in decreasing the useful lifetime of an interconnect. A number of groups have shown experimentally that increased surface oxygen concentration, increased moisture content in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f94581a8402936a048399b1540276d
https://doi.org/10.1007/s10854-011-0406-x
https://doi.org/10.1007/s10854-011-0406-x
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N59-N61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9811aa2ecb71ad733aab56d7c04135d7
https://doi.org/10.1149/2.018404jss
https://doi.org/10.1149/2.018404jss
Publikováno v:
Thin Solid Films. 517:5630-5633
In this article we study the effect of metallic barriers in inhibiting copper ion drift/diffusion into low-k dielectrics through a mathematical analysis. We extend our previous drift/diffusion model for copper ion drift without barriers to include th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e00816ac60223e3cb30c4c1aa8daf94
https://doi.org/10.1016/j.tsf.2009.02.029
https://doi.org/10.1016/j.tsf.2009.02.029
Autor:
Joel L. Plawsky, William N. Gill
Publikováno v:
Thin Solid Films. 515:4794-4800
An exact analytical solution to metal diffusion in a triplet stack consisting of a barrier material layer, an interlayer dielectric, and a semiconductor substrate has been developed. The solution shows how the diffusive behavior of the metal depends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc8efe022f4de074bdab6b2ac897b8b
https://doi.org/10.1016/j.tsf.2006.11.153
https://doi.org/10.1016/j.tsf.2006.11.153
Publikováno v:
IRPS
A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d523c34e98859f1d2411ebd909951bde
https://doi.org/10.1109/irps.2015.7112776
https://doi.org/10.1109/irps.2015.7112776
Publikováno v:
Journal of Non-Crystalline Solids. 350:336-344
The presence of -OH groups increases the dielectric constant of mesoporous silica films making them less suitable as interlayer dielectrics. To reduce the concentration of -OH groups a sintering process was used. The films were prepared by a spin-on,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f81a134b908ba4bd76d49bcbaa05a22e
https://doi.org/10.1016/j.jnoncrysol.2004.07.084
https://doi.org/10.1016/j.jnoncrysol.2004.07.084
Publikováno v:
Journal of Non-Crystalline Solids. 350:14-22
We report observations of the morphological changes in sputter-deposited thin copper films (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42a2594ec93b9e7a0148fcf6179220e
https://doi.org/10.1016/j.jnoncrysol.2004.08.229
https://doi.org/10.1016/j.jnoncrysol.2004.08.229