Zobrazeno 1 - 10
of 74
pro vyhledávání: '"William M Mook"'
Autor:
Jordan J. Sickle, William M. Mook, Frank W. DelRio, Anastasia G. Ilgen, Wendelin J. Wright, Karin A. Dahmen
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract In response to gradual nanoindentation, the surface of muscovite mica deforms by sudden stochastic nanometer-scale displacement bursts. Here, the statistics of these displacement events are interpreted using a statistical model previously us
Externí odkaz:
https://doaj.org/article/38a8305957fc46938774fddea7517d52
Autor:
Frank W. DelRio, Scott J. Grutzik, William M. Mook, Sara M. Dickens, Paul G. Kotula, Eric D. Hintsala, Douglas D. Stauffer, Brad L. Boyce
Publikováno v:
Materials Research Letters, Vol 10, Iss 11, Pp 728-735 (2022)
In this letter, we demonstrated stable nanoscale fracture in single-crystal silicon using an in-situ wedge-loaded double cantilever beam (DCB) specimen. The fracture toughness KIC was calculated directly from instrumented measurement of force and dis
Externí odkaz:
https://doaj.org/article/556084ad988d4b5a9c40549530ccd645
Publikováno v:
Journal of Materials Science. 57:10059-10071
Chemomechanical weakening of layered phyllosilicate muscovite mica was studied as a function of chemical environment via in situ liquid-nanoindentation under four conditions (dry, deionized water, and two NaCl solutions of different pH). While tradit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfac0e64a50f8982b82f695f6998e58a
https://doi.org/10.1007/s10853-022-07315-4
https://doi.org/10.1007/s10853-022-07315-4
Autor:
Sara M Dickens, Frank W DelRio, Scott J Grutzik, William M Mook, Brad L Boyce, Eric Hintsala, Douglas Stauffer, Robert F Cook
Publikováno v:
Microscopy and Microanalysis. 28:14-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7c5f8f985287688efc9ea46680b379
https://doi.org/10.1017/s1431927622000964
https://doi.org/10.1017/s1431927622000964
Autor:
Igor V. Vernik, Vladimir Bolkhovsky, Nancy A. Missert, Mark W. Jenkins, Oleg A. Mukhanov, Alex Wynn, Alex F. Kirichenko, Alexandra Day, William M. Mook, Leonard M. Johnson, Pai Tangyunyong
Publikováno v:
IEEE Transactions on Applied Superconductivity. 29:1-4
The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. This work applies thermally-induced voltage alteration (TIVA), to a bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8341919eb1d75aeaec2e4bc337f51339
https://doi.org/10.1109/tasc.2019.2908052
https://doi.org/10.1109/tasc.2019.2908052
Autor:
A. B. Tigges, William M. Mook, Anastasia G. Ilgen, Katherine L. Jungjohann, R. C. Choens, Kateryna Artyushkova
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-13 (2018)
Scientific Reports
Scientific Reports
Calcite (CaCO3) is one of the most abundant minerals in the Earth’s crust, and it is susceptible to subcritical chemically-driven fracturing. Understanding chemical processes at individual fracture tips, and how they control the development of frac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3683a388720be16a2cfb5019f9502cba
http://link.springer.com/article/10.1038/s41598-018-34355-1
http://link.springer.com/article/10.1038/s41598-018-34355-1
Autor:
J. Kevin Baldwin, Siddhartha Pathak, Nathan A. Mara, William M. Mook, Antonia Antoniou, Ran Liu
Publikováno v:
International Journal of Plasticity. 98:139-155
Mechanical properties of thin films are often obtained solely from nanoindentation. At the same time, such measurements are characterized by a substantial amount of uncertainty, especially when mean pressure or hardness are used to infer uniaxial yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789ae357bdbdd5dc525280a39a028e59
https://doi.org/10.1016/j.ijplas.2017.07.005
https://doi.org/10.1016/j.ijplas.2017.07.005
Publikováno v:
Nano Letters. 17:2189-2196
Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d979e4fe250c820df12e87a23a13bec2
https://doi.org/10.1021/acs.nanolett.6b04713
https://doi.org/10.1021/acs.nanolett.6b04713
Autor:
Timothy J. Kucharski, Ihsan Taie, Jeffery A. Aguiar, Khalid Hattar, Katherine L. Jungjohann, Michele L. Ostraat, Tatiana S. Pilyugina, Claire Chisholm, Paul G. Kotula, Steven C. Hayden, Rachael O. Grudt, Daniel Charles Bufford, William M. Mook
Publikováno v:
npj Materials Degradation, Vol 3, Iss 1, Pp 1-9 (2019)
Mitigating corrosion remains a daunting challenge due to localized, nanoscale corrosion events that are poorly understood but are known to cause unpredictable variations in material longevity. Here, the most recent advances in liquid-cell transmissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3526df9122cfeb1125559630bd393fed
https://doi.org/10.1038/s41529-019-0078-1
https://doi.org/10.1038/s41529-019-0078-1
Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates
Autor:
Atsunori Tanaka, Woojin Choi, Katherine L. Jungjohann, Renjie Chen, Shadi A. Dayeh, Ren Liu, William M. Mook, Paul K. L. Yu
Publikováno v:
Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Liu, Ren; Mook, William M; Jungjohann, Katherine L; et al.(2019). Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates. Journal of Applied Physics, 125(8), 082517. doi: 10.1063/1.5049393. UC Office of the President: UC Lab Fees Research Program (LFRP); a funding opportunity through UC Research Initiatives (UCRI). Retrieved from: http://www.escholarship.org/uc/item/1zs8j71f
A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::555c00f087a15a376134805d8699a20e
http://www.escholarship.org/uc/item/1zs8j71f
http://www.escholarship.org/uc/item/1zs8j71f
