Zobrazeno 1 - 10
of 12
pro vyhledávání: '"William L. Krisa"'
Autor:
V.M. McNeil, William L. Krisa, G.V. Thakar, D.A. Prinslow, J.L. Wise, J.A. McKee, Cesar M. Garza, P.E. Nicollian, Richard A. Chapman, A.L. Esquivel, Bert R. Riemenschneider, Robert H. Eklund, C.K. Lee, Andrew T. Appel, S.K. Madan, T. Utsumi
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
TiN or organic Bottom AntiReflection Coatings (BARC), polysilicon hammerheads, phase shift masks, quadrupole off-axis illumination I-line lithography at N.A.=0.60, shallow source/drain extenders, LOCOS isolation, and 6 nm gate oxide are used to obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccae4001e069c95dcc39d5720597c06c
https://doi.org/10.1109/vlsit.1995.520865
https://doi.org/10.1109/vlsit.1995.520865
Publikováno v:
SPIE Proceedings.
Decreasing critical dimensions and pitch at metal and hole levels requires the use of Deep-UV processing. Associated with this processing are issues of resist-substrate interactions, small process margins, and increasing aspect ratios forcing the mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cafe5627abc3a57100cd8b433f7540e6
https://doi.org/10.1117/12.275976
https://doi.org/10.1117/12.275976
Publikováno v:
Advances in Resist Technology and Processing XIV.
It is well known that chemically amplified positive tone DUV resists are sensitive to substrate contamination, manifesting themselves as a 'foot' on TiN substrates. Studies have proposed that there is an interaction between nitrogen used in the forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e628e0bb8dba63086c96827514fc0efb
https://doi.org/10.1117/12.275899
https://doi.org/10.1117/12.275899
Publikováno v:
SPIE Proceedings.
Implementation of DUV (248 nm) into 0.25 micrometers production requires an understanding of the associated process complexity. With DUV resists, this encompasses addressing issues of profile integrity on various substrates, etch resistance, and adeq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2ab360c169211c0a4dc72750a12e75
https://doi.org/10.1117/12.240905
https://doi.org/10.1117/12.240905
Publikováno v:
SPIE Proceedings.
The application of optical enhancement techniques on high numerical aperture i-line steppers along with attenuated phase shift reticles have enabled contact processing to 0.35 micrometers and below. Previous work has shown that a high numerical apert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e3b8cec5e008038e5e2b1362842fb8
https://doi.org/10.1117/12.209282
https://doi.org/10.1117/12.209282
Publikováno v:
SPIE Proceedings.
The manufacturing of high performance integrated circuits requires tight control of critical dimensions (CD) at poly pattern. Achieving these CD requirements forces process engineers to eliminate linewidth variation caused by reflective notching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5397db130106e8b5e9fabda7038022a
https://doi.org/10.1117/12.209291
https://doi.org/10.1117/12.209291
Publikováno v:
SPIE Proceedings.
Evaluation of contact holes ranging from 0.35 micrometers to 0.7 micrometers for a number of i-line photoresists and attenuated phase-shift reticles has been completed. The study compared the effects of different photoresists patterned with a binary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bd5f2b167406ae88d01c8428f086b0
https://doi.org/10.1117/12.175456
https://doi.org/10.1117/12.175456
Publikováno v:
SPIE Proceedings.
Extending i-line lithography to 0.35 micrometers processing is a realistic possibility because of improvements in photoresists, steppers, track equipment, and reticle technology. The manufacturing of 0.35 micrometers devices can include as many as tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1f52f93237922bbf3f4ddf03d5ffb2
https://doi.org/10.1117/12.175458
https://doi.org/10.1117/12.175458
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Conference
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