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Publikováno v:
Journal of Applied Physics. 93:8373-8375
We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ∼40% at 300 mV, resistance–area product (RA) ∼1–3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d180858deafcfb230f093b7bfcd132ba
https://doi.org/10.1063/1.1558241
https://doi.org/10.1063/1.1558241
