Výsledky vyhledávání - "William J. Shaff"

Purification and mechanical nanosizing of Eu-doped GaN

Autor: Xiaomei Guo, Tiju Thomas, Francis J. DiSalvo, Jesse Reiherzer, Michal Lipson, Mark Dreibelbis, Mvs Chandrashekhar, William J. Shaff, Michael G. Spencer, Kewen Li, Carl B. Poitras

Publikováno v: Journal of Crystal Growth. 311:4402-4407

Eu:GaN powder synthesized using a high temperature ammonothermal process is known to be dark in appearance due to presence of Eu-containing absorbing particles. Improvement of the visual quality of the Eu:GaN powder is achieved by rinsing in dilute a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::872695252ae9836f49399610b646ced7
https://doi.org/10.1016/j.jcrysgro.2009.07.028

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Ultrashort Pulse Generation with Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband Transitions in GaN/AlGaN Quantum Wells

Autor: William J. Shaff, Faisal R. Ahmad, Paul A. George, Jahan M. Dawlaty, Fahan Rana

Publikováno v: MRS Proceedings. 829

We present a novel scheme for generating high energy ultrashort pulses in modelocked semiconductor lasers using a fast saturable absorber based upon intersubband transitions (ISBT) in GaN/AlGaN superlattice. The fast electron relaxation time (∼100�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::188991996880d12196a2a1b1cc16ef2d
https://doi.org/10.1557/proc-829-b4.1

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