Zobrazeno 1 - 10
of 17
pro vyhledávání: '"William J. Ooms"'
Autor:
J. Kulik, Peter Fejes, Yi Wei, Alexander A. Demkov, William J. Ooms, X. Hu, H. Li, John L. Edwards, Xiaodong Zhang, Ravindranath Droopad, Zhiyi Jimmy Yu, K. Moore
Publikováno v:
Journal of Applied Physics. 93:4521-4525
Most semiconductor materials such as Si, Ge, and GaAs are subject to oxidation when exposed to oxidants. This results in difficulties in the heterointegration of epitaxial oxides on these semiconductors. Even though certain oxides may be thermodynami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346c17d65133fbf49167533e72d5952d
https://doi.org/10.1063/1.1562001
https://doi.org/10.1063/1.1562001
Autor:
Corey Overgaard, Zhiyi Jimmy Yu, William J. Ooms, Ravi Droopad, Jay Curless, K. Eisenbeiser, Jamal Ramdani, Jeffrey M. Finder, Lyndee L. Hilt, John L. Edwards
Publikováno v:
Materials Science and Engineering: B. 87:292-296
Thin films of perovskite-type oxide SrTiO 3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad165b92386b0377e883b7daf08484
https://doi.org/10.1016/s0921-5107(01)00727-9
https://doi.org/10.1016/s0921-5107(01)00727-9
Autor:
Xiaoming Hu, William J. Ooms, John L. Edwards, Jay Curless, Ravindranath Droopad, K. Eisenbeiser, Dror Sarid, Zhiyi Jimmy Yu
Publikováno v:
Applied Surface Science. 181:103-110
The adsorption of submonolayers and monolayers of strontium and barium on Si(1 0 0) are reported using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The samples were prepared by deposition at room temperature followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a3fa7752ae12f19d426a8a5f9d2b81
https://doi.org/10.1016/s0169-4332(01)00379-8
https://doi.org/10.1016/s0169-4332(01)00379-8
Autor:
Charles A. Peterson, Jamal Ramdani, Xiaoming Hu, Jay Curless, William J. Ooms, Ravi Droopad, Zhiyi Jimmy Yu, Xiaowei Yao, Junling Wang, Daniel S. Marshall, Dror Sarid, J. A. Hallmark
Publikováno v:
Surface Science. 457:L391-L396
The initial stages of barium adsorption on Si(100)-(2×1) at room temperature has been studied by ultrahigh vacuum scanning tunneling microscopy (STM) under both positive and negative sample-bias imaging conditions. Two distinct adsorption sites have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f122a0906a8f6eada3025fcc7169d0
https://doi.org/10.1016/s0039-6028(00)00406-4
https://doi.org/10.1016/s0039-6028(00)00406-4
Autor:
Jamal Ramdani, Vidya Kaushik, Jay Curless, William J. Ooms, Jeffrey M. Finder, Corey Overgaard, S Pietambaram, Zhiyi Jimmy Yu, J. A. Hallmark, K. Eisenbeiser, Ravindranath Droopad, Prasad V. Alluri
Publikováno v:
Applied Surface Science. :127-133
Single-crystal SrTiO3 has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO3/Si interface. A regrowth of an amorphous interfacial layer as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93244bf681c193a9731068424eac5cb6
https://doi.org/10.1016/s0169-4332(00)00050-7
https://doi.org/10.1016/s0169-4332(00)00050-7
Autor:
Charles A. Peterson, William J. Ooms, Ravi Droopad, J. A. Hallmark, Xiaoming Hu, Daniel S. Marshall, Junling Wang, Dror Sarid, Xiaowei Yao, Zhiyi Jimmy Yu
Publikováno v:
Surface Science. 445:256-266
The initial stages and surface structures of the (3×2) phase of Ba adsorption on an Si(100)-2×1 surface held at 900°C have been studied by low-energy electron diffraction, Auger electron spectroscopy, and ultra-high vacuum scanning tunneling micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a6c269e923e275e3b6f6319bacaa80
https://doi.org/10.1016/s0039-6028(99)01079-1
https://doi.org/10.1016/s0039-6028(99)01079-1
Autor:
J. A. Hallmark, Pablo Ordejón, Emilio Artacho, Javier Junquera, William J. Ooms, Daniel S. Marshall, Jun Wang, Daniel Sánchez-Portal, José M. Soler
Publikováno v:
Scopus-Elsevier
Bonding and diffusion of a Ba adatom on a Si(001) surface have been studied using first-principles density-functional calculations. It is found that the favorable bonding site of the adatom is the fourfold site located in the trough between Si dimer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bacd9561e9432e3a253c34c01c0f7a80
https://doi.org/10.1103/physrevb.60.4968
https://doi.org/10.1103/physrevb.60.4968
Autor:
J. A. Hallmark, Xiaoming Hu, Charles A. Peterson, Dror Sarid, Daniel S. Marshall, William J. Ooms, Ravi Droopad, Junling Wang, Zhiyi Jimmy Yu
Publikováno v:
Surface Science. 426:69-74
Phase transitions of Ba adsorption on a clean Si(001)-(2×1) studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) are reported. The depositions of the Ba were performed with (a) the substrate held at room temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83320ad8c5f6ef217e8c331d7577d068
https://doi.org/10.1016/s0039-6028(99)00219-8
https://doi.org/10.1016/s0039-6028(99)00219-8
Autor:
Jeffrey M. Finder, S. Rockwell, K. Eisenbeiser, Rudy Emrick, Corey Overgaard, Zhiyi Jimmy Yu, John Holmes, Ravindranath Droopad, William J. Ooms
Publikováno v:
IEEE Electron Device Letters. 23:300-302
Heteroepitaxial growth of GaAs on an Si substrate has been achieved through the use of crystalline SrTiO/sub 3/ (STO) and amorphous SiO/sub 2/ buffer layers. The buffer layers serve to accommodate some of the lattice mismatch between the substrate an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e90f556e03c63eea2e32fbbb8ca27736
https://doi.org/10.1109/led.2002.1004215
https://doi.org/10.1109/led.2002.1004215
Publikováno v:
IEEE Transactions on Electron Devices. 40:278-284
A new self-aligned p-channel HFET structure was evaluated for application to complementary HFET circuits. The AlGaAs/InGaAs HFET structure uses an anisotype graded n/sup +/ InGaAs/GaAs semiconductor gate to enhance the barrier height of the FET, resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d36a653477bc600910ea8d5aaaeec65f
https://doi.org/10.1109/16.182501
https://doi.org/10.1109/16.182501