Zobrazeno 1 - 10
of 10
pro vyhledávání: '"William Hunks"'
Autor:
William Hunks, Mikko Ritala, Markku Leskelä, Timo Sajavaara, Mikko Heikkilä, Kaupo Kukli, Esa Puukilainen, Chongying Xu, Jaakko Niinistö, Timothee Blanquart
Publikováno v:
Chemistry of Materials. 24:975-980
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c3d5525d1de037472db3ba9715232e0
https://doi.org/10.1021/cm2026812
https://doi.org/10.1021/cm2026812
Autor:
Arnold L. Rheingold, Antonio G. DiPasquale, William Hunks, Chongying Xu, Philip S.H. Chen, Tianniu Chen
Publikováno v:
Organometallics. 29:501-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e031f6975fdd478dd4a358cc8c560430
https://doi.org/10.1021/om900801w
https://doi.org/10.1021/om900801w
Autor:
Jeffery F. Roeder, Tianniu Chen, Matthias Stender, Chongying Xu, William Hunks, Philip S.H. Chen, Gregory T. Stauf
Publikováno v:
ECS Transactions. 11:269-278
The deposition of Ge-Sb-Te (GST) chalcogenide alloys in high aspect-ratio trench structures via CVD and ALD-like processes has attracted great attention for their application in next generation non-volatile Phase Change Random Access Memory (PRAM) de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd22340b0a243409e7642bd285cf04f
https://doi.org/10.1149/1.2779090
https://doi.org/10.1149/1.2779090
Autor:
James A. O’Neill, Tomas H. Baum, Steven Lippy, Gayle Murdoch, Geoffrey Yeap, Jerry Bao, William Hunks, Mustafa Badaroglu, Jun-Fei Zheng, Philip S.H. Chen, Jürgen Bömmels, Asa Frye, Vladimir Machkaoutsan, Zsolt Tokei, John Jianhong Zhu, Ruben R. Lieten, Weimin Li, Jeff Xu
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
We report for the first time a highly selective CVD Co deposition on Cu to fill a 45nm diameter 3:1 aspect ratio via in a Cu dual damascene structure. We have achieved void-free Co fill of the via, demonstrating that a selective bottom-up via fill wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44cf17ee68d938de95166066baf1a9e6
https://doi.org/10.1109/iitc-mam.2015.7325663
https://doi.org/10.1109/iitc-mam.2015.7325663
Autor:
Gregory T. Stauf, William Hunks, Philip S.H. Chen, Thomas M. Cameron, Tianniu Chen, Chongying Xu, Arnold L. Rheingold, Antonio G. DiPasquale
Publikováno v:
European Journal of Inorganic Chemistry. 2009:2047-2049
Insertion reactions between a liquid germylene 1, and either a carbodiimide or dialkyl telluride lead to the formation of the group-14-metal(II) guanidinate complex 2 or the stable group-14-metal terminal alkyl tellurolate compound 3, respectively. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a249a5e7eff18e11a4521c7cb97f8d1
https://doi.org/10.1002/ejic.200900177
https://doi.org/10.1002/ejic.200900177
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a
https://doi.org/10.1557/proc-1160-h14-11
https://doi.org/10.1557/proc-1160-h14-11
Autor:
Matthias Stender, William Hunks, Philip S.H. Chen, Gregory T. Stauf, Tianniu Chen, Jeffrey F. Roeder, Chongying Xu
Publikováno v:
MRS Proceedings. 1071
This is the first submission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089495e918867dc8270ea0536950fc18
https://doi.org/10.1557/proc-1071-f09-10
https://doi.org/10.1557/proc-1071-f09-10
Autor:
Jeffrey F. Roeder, Tianniu Chen, Chongying Xu, Philip S.H. Chen, Gregory T. Stauf, William Hunks, Leah Maylott, Matthias Stender
Publikováno v:
MRS Proceedings. 1071
In order to deposit conformal films in the high aspect ratio trench and via structures in future high-density phase-change memory devices, suitable ALD/CVD precursors are needed. We report on the development of novel germanium(II) metal-organic ALD/C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2073f4bac01cf82b40fec013a4d4471
https://doi.org/10.1557/proc-1071-f09-11
https://doi.org/10.1557/proc-1071-f09-11
Publikováno v:
ECS Meeting Abstracts. :1004-1004
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a51dd93aead92f70fe191ed67373d1da
https://doi.org/10.1149/ma2007-02/17/1004
https://doi.org/10.1149/ma2007-02/17/1004
Autor:
Tianniu Chen, William Hunks, Philip S. Chen, Chongying Xu, Antonio G. DiPasquale, Arnold L. Rheingold
Publikováno v:
Organometallics; Jan2010, Vol. 29 Issue 2, p501-504, 4p