Zobrazeno 1 - 10
of 11
pro vyhledávání: '"William H. Howland"'
Autor:
Gene A. Lucadamo, Natalia Tymiak-Carlson, Paolo R. Zafred, Richard W. Smith, William H. Howland, Justin W. Cook
Publikováno v:
Wear. :11-20
Zr-based alloys have been used in the commercial nuclear industry for decades. The wear behavior of such alloys has also attracted attention. However, the extreme operating environment that exists a nuclear reactor presents considerable experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97cb1534c459cee2ee6e415218449280
https://doi.org/10.1016/j.wear.2018.01.012
https://doi.org/10.1016/j.wear.2018.01.012
Publikováno v:
Metallurgical and Materials Transactions A. 46:93-101
A modification of the “rate theory” approach to point defect balance modeling is considered in which the production term is written to explicitly capture the discrete occurrence of distinct displacement damage cascades. The constant production ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f81970b703beec3703c4e6d5c22fbdcf
https://doi.org/10.1007/s11661-014-2409-8
https://doi.org/10.1007/s11661-014-2409-8
Publikováno v:
AIP Conference Proceedings.
The performance of deep submicron devices depends heavily on the electrical properties of the gate dielectric. Electrical properties such as dielectric constant, leakage current density, interface trap and oxide trapped charge, dielectric integrity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef59734706e01163ee93e941e443d00
https://doi.org/10.1063/1.1354380
https://doi.org/10.1063/1.1354380
Autor:
G. A. Gruber, William H. Howland, Robert J. Hillard, Robert G. Mazur, Richard Siergiej, Stephen M. Ramey, S. Evseev
Publikováno v:
AIP Conference Proceedings.
A new metrology method has been developed for the monitoring of advanced gate dielectric processes associated with 0.1 μm technology. Unlike previous techniques that involved corona or Hg gate based methods, this technique measures all gate dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ec7d1292d307981b26f55c90bac851
https://doi.org/10.1063/1.1354382
https://doi.org/10.1063/1.1354382
Publikováno v:
Journal of adolescence. 19(6)
The purpose of this study was to investigate the effects of a role-taking, action learning program on the cognitive and ego development of African-American rural high school students. The program employed instruction in scientific problem-solving in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918e3cd1c4c508421c73be00a2f44e09
https://pubmed.ncbi.nlm.nih.gov/9245305
https://pubmed.ncbi.nlm.nih.gov/9245305
Electrical characterization of silicon-on-insulator structures with a nondamaging elastic–metal gate
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:450
This article explores electrical characterization methods for silicon-on-insulator (SOI) structures with a nondamaging elastic metal gate (EM gate). Important material electrical properties related to the top silicon layer, gate dielectric and interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6b0c83b62f9b0fa57f6ca320fec8e69
https://doi.org/10.1116/1.1621888
https://doi.org/10.1116/1.1621888
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:488
The most critical parameter for deep submicron metal–oxide–semiconductor (MOS) field effect transistors (MOSFETs) is the threshold voltage (VT). The device VT is highly dependent on processing; specifically, the ion implanted channel-doping profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574d8ef499f62cfce5ea6cba8b361918
https://doi.org/10.1116/1.1424284
https://doi.org/10.1116/1.1424284
Publikováno v:
Journal of the American Chemical Society. 77:2144-2150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d790a4507d7d7312f25f465602b6963
https://doi.org/10.1021/ja01613a031
https://doi.org/10.1021/ja01613a031
Publikováno v:
The Journal of Chemical Physics. 23:1923-1924
The distance of closest approach in mercury determined from vapor viscosity data, 3.25 A, differs considerably from the value found by x‐ray and neutron diffraction studies on liquid Hg, 3.00 A. This x‐ray value has been confirmed using a balance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd203ce41f26093603e213f9809fbfd
https://doi.org/10.1063/1.1740605
https://doi.org/10.1063/1.1740605
Autor:
Leo F. Epstein, William H. Howland
Publikováno v:
Industrial & Engineering Chemistry. 49:1931-1932
This study was undertaken to determine the influence of temperature and composition of solid sodium on its rate of reaction with air. A quantitative re- examination was made of the observation that the speed of reaction of alkali metals and air is ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ca3bbcc0f9e77be025791246931c87
https://doi.org/10.1021/ie50575a045
https://doi.org/10.1021/ie50575a045