Zobrazeno 1 - 10
of 87
pro vyhledávání: '"William Gerard Hurley"'
Publikováno v:
Case Studies in Thermal Engineering, Vol 14, Iss , Pp - (2019)
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal cha
Externí odkaz:
https://doaj.org/article/b1c002bb41384626947bbd6ba4a33ccc
Publikováno v:
Energies, Vol 12, Iss 9, p 1791 (2019)
On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it
Externí odkaz:
https://doaj.org/article/612b26eef557442e89f1093dd4133a99
Publikováno v:
Energies, Vol 12, Iss 5, p 851 (2019)
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working
Externí odkaz:
https://doaj.org/article/48e1d06976e94f3698b8490c0a95b5e5
This paper is to empirically determine the most efficient MPPT technique and the most efficient photovoltaic technology under partial shading conditions (PSC). The research involved simulating and experimenting with a selected PV and the most efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e21e1826a24df36f3dc468fd2dcf470
https://doi.org/10.36227/techrxiv.20682382
https://doi.org/10.36227/techrxiv.20682382
Publikováno v:
IEEE Transactions on Electron Devices. 67:230-236
This article describes an improved behavior model for IGBT modules. The new steady-state characteristic model of the IGBT with a correction function was built to improve the saturation current for different gate-emitter voltages. Two important nonlin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d090707f81791c0386a589addd324d7
https://doi.org/10.1109/ted.2019.2954329
https://doi.org/10.1109/ted.2019.2954329
Publikováno v:
IEEE Transactions on Electron Devices. 66:4858-4864
An insulated-gate bipolar transistor (IGBT) module has two aging modes: 1) bond wire fatigue and 2) solder fatigue, both of which have a significant impact on the reliability of power electronic systems. A good way to increase the service life of suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12837a3194ba970a621918c0a0ea7905
https://doi.org/10.1109/ted.2019.2942767
https://doi.org/10.1109/ted.2019.2942767
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:501-508
A model for the online estimation of junction temperature based on the gate pre-threshold voltage in high-power insulated-gate bipolar transistors (IGBTs) was proposed. First, the turn-on behavior and temperature dependence of the gate-emitter voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853ff6ce358c767ea580b119c0b1c892
https://doi.org/10.1109/tdmr.2019.2923457
https://doi.org/10.1109/tdmr.2019.2923457
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:333-340
Insulated gate bipolar transistors (IGBTs) are widely used in new energy fields, such as wind power converters and electric vehicles. The junction temperature characteristics and junction temperature measurements greatly influence the reliability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf2786ff5c7384b9bcc496038cc9b475
https://doi.org/10.1109/tdmr.2019.2910182
https://doi.org/10.1109/tdmr.2019.2910182
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:392-403
Implementation of real-time health assessment and thermal management of insulated gate bipolar transistors (IGBTs) require thermal equivalent circuit models that can be used to predict the junction temperature of the modules. Solder aging in IGBTs ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a52bc4467452f4085e6fc1b122eb748
https://doi.org/10.1109/jestpe.2018.2796624
https://doi.org/10.1109/jestpe.2018.2796624
Autor:
Pooya Davari, Bo Vork Nielsen, Alex Buus Nielsen, Frede Blaabjerg, William Gerard Hurley, Maeve Duffy
Publikováno v:
Nielsen, A B, Gerard Hurley, W, Davari, P, Duffy, M & Blaabjerg, F 2020, Design and Optimization Methodology of Transformer for 700/400 V Series Resonant DC/DC Converters with Enhanced Power Density . in IEEE Energy Conversion Congress and Exposition (ECCE) 2020 . IEEE, IEEE Energy Conversion Congress and Exposition, pp. 3484-3491, 2020 IEEE Energy Conversion Congress and Exposition (ECCE 2020), Detroit, Michigan, United States, 11/10/2020 . https://doi.org/10.1109/ECCE44975.2020.9236308
This paper investigates the potential volume reduction of a transformer for a Series Resonant Converter (SRC), using silicon carbide semiconductors, in a Ground Power Unit (GPU) application. Using an optimization based theoretical and empirical trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3647b0ce6f9bf959ab197b536269d45
https://vbn.aau.dk/da/publications/5969bcec-a3e7-441a-b67c-ffa0f03e9a0d
https://vbn.aau.dk/da/publications/5969bcec-a3e7-441a-b67c-ffa0f03e9a0d