Zobrazeno 1 - 10
of 164
pro vyhledávání: '"William G. Oldham"'
Publikováno v:
Journal of Non-Crystalline Solids. 276:61-71
We describe vitreous silica as a two-phase system. Low-temperature phase A and high-temperature phase B are connected by a solid-state phase transition and the phase transition temperature should be higher than the glass transition temperature. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da8eb426ca1f175cb9508ae0d536854f
https://doi.org/10.1016/s0022-3093(00)00263-5
https://doi.org/10.1016/s0022-3093(00)00263-5
Publikováno v:
Journal of Applied Physics. 87:3287-3293
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad67934d060e4bbef3a907edd5052c2d
https://doi.org/10.1063/1.372338
https://doi.org/10.1063/1.372338
Autor:
Richard E. Schenker, William G. Oldham
Publikováno v:
Microelectronic Engineering. :141-144
The elements near the pupil of a diffraction-limited optical system are examined for the effects of radiation-induced compaction on optical performance. The Zernike phase aberration terms resulting from 193-nm-induced compaction in these element are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8890a4db5ebb1f3ec711a187a4ae21
https://doi.org/10.1016/s0167-9317(98)00031-8
https://doi.org/10.1016/s0167-9317(98)00031-8
Autor:
William G. Oldham, Richard E. Schenker
Publikováno v:
Journal of Applied Physics. 82:1065-1071
A number of fused silica samples were evaluated for their resistance to densification by deep UV radiation at 193 nm wavelength. Density changes for all the samples equal the product of a material dependent constant and the absorbed two-photon dose t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb69489187f93281c720498100e27db5
https://doi.org/10.1063/1.365872
https://doi.org/10.1063/1.365872
Publikováno v:
IEEE Circuits and Devices Magazine. 12:11-15
Lens technology has advanced to the point where lithographic feature sizes equal to, or even smaller than, the wavelength of the light used in the stepper can be achieved in production. How far optical lithography can go from here depends both on how
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3636c4c9e713a7f9673b39aca01ea1dc
https://doi.org/10.1109/101.481203
https://doi.org/10.1109/101.481203
Publikováno v:
Journal of The Electrochemical Society. 140:2427-2432
The transport of copper in silicon dioxide thermally grown on single crystalline silicon was studied by capacitance techniques, secondary ion mass spectroscopy (SIMS) analysis, and Rutherford backscattering spectrometry (RBS). Metal/oxide/silicon (MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e4c44f6cf1eaaff730a83d2e876d26
https://doi.org/10.1149/1.2220837
https://doi.org/10.1149/1.2220837
Publikováno v:
Journal of Applied Physics. 71:3225-3230
The quality of epitaxial silicon grown on regions exposed to plasma etching using He, CHF3, and CF4 etching gases has been studied. Plasma‐etch‐induced surface damage leads to defects in the epilayers. Dislocation loops and precipitates at the ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24ea95bbb393806968402f618e3ef2d
https://doi.org/10.1063/1.350968
https://doi.org/10.1063/1.350968
Autor:
Carl Galewski, William G. Oldham
Publikováno v:
Journal of The Electrochemical Society. 139:543-548
A tubular hot-wall silicon epitaxial reactor operating at reduced pressure is described. It has been constructed by modifying a commercial low-pressure chemical vapor deposition furnace and is proposed as a potentially cost-effective means of deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4509f583d50047bdd2094237c172b9c0
https://doi.org/10.1149/1.2069253
https://doi.org/10.1149/1.2069253
Autor:
C.J. Galewski, William G. Oldham
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5:169-179
A tubular hot-wall silicon epitaxial reactor operated in the selective deposition regime is characterized for growth rate uniformity in both the radial and longitudinal directions. The range of experimental conditions includes temperatures from 900 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b964fa9735bf29ee90acd69c5cb74d
https://doi.org/10.1109/66.149810
https://doi.org/10.1109/66.149810
Publikováno v:
Journal of Applied Physics. 70:685-692
The low‐temperature epitaxial growth of Si under conditions in which no nucleation occurs on SiO2 (selective growth) results in interesting new surface morphology. For substrates free of nonvolatile surface contaminants, specular defect‐free film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f34a367867b9a2f3509a74574cb44b
https://doi.org/10.1063/1.349648
https://doi.org/10.1063/1.349648