Zobrazeno 1 - 10
of 62
pro vyhledávání: '"William G. Breiland"'
Autor:
William G. Breiland, Mary H. Crawford, Gerald Thaler, James Randall Creighton, Daniel D. Koleske
Publikováno v:
Journal of Crystal Growth. 310:1062-1068
We report a pyrometer that operates at a mid-infrared wavelength range (7–8 μm), where sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also employs a novel “self-reflectance” method of emissivity correction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2d117b27fc16fdbcf1aafc5e093a9d
https://doi.org/10.1016/j.jcrysgro.2007.12.063
https://doi.org/10.1016/j.jcrysgro.2007.12.063
Publikováno v:
Journal of Crystal Growth. 261:204-213
Using in situ laser light scattering, we have observed gas-phase nanoparticles formed during AlN, GaN and InN OMVPE. The response of the scattering intensity to a wide range of conditions indicates that the AlN parasitic chemistry is considerably dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb843980aebf6254089a8c8667be5a2
https://doi.org/10.1016/j.jcrysgro.2003.11.074
https://doi.org/10.1016/j.jcrysgro.2003.11.074
Publikováno v:
DOE / OSTI
TBA (tert-butylarsine, H{sub 2}AsC(CH{sub 3}){sub 3}) has been demonstrated to be an effective arsenic precursor for the deposition of compound semiconductors such as GaAs by MOCVD (metal organic chemical vapor deposition). TBA is used as a liquid (b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3c62bc1340f0d4e7d1026ea87e44559
https://doi.org/10.1016/s0022-0248(00)00381-x
https://doi.org/10.1016/s0022-0248(00)00381-x
Autor:
Michael E. Coltrin, Hong Q. Hou, Harry K. Moffat, J. Randall Creighton, Jeffrey Y. Tsao, William G. Breiland
Publikováno v:
Materials Science and Engineering: R: Reports. 24:241-274
Organometallic vapor phase epitaxy (OMVPE) has emerged in this past decade as a flexible and powerful epitaxial materials synthesis technology for a wide range of compound–semiconductor materials and devices. Despite its capabilities and rapidly gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c15fc0ae7f0628e5c89b4a64340d4d2
https://doi.org/10.1016/s0927-796x(98)00018-7
https://doi.org/10.1016/s0927-796x(98)00018-7
Publikováno v:
Journal of Crystal Growth. 195:199-204
In situ etching of GaAs with AsCl 3 in metalorganic vapor-phase epitaxy (MOVPE) reactor was studied with in situ reflectometry as a function of the AsCl 3 flow rate, substrate temperature, and AsH 3 flow rate during etching. A smooth and uniform etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912a62800e51b500fbf71cf2350a9519
https://doi.org/10.1016/s0022-0248(98)00733-7
https://doi.org/10.1016/s0022-0248(98)00733-7
Publikováno v:
Journal of Crystal Growth. 195:181-186
The suitability of the wavelength range provided by silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growth of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths at 25 degree C of 1.7, 1.2, and 2.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803d3533af53f68611eb4698c95119d8
https://doi.org/10.1016/s0022-0248(98)00699-x
https://doi.org/10.1016/s0022-0248(98)00699-x
Autor:
K. C. Baucom, William G. Breiland, B. E. Hammons, Robert M. Biefeld, Hong Q. Hou, R. A. Stall
Publikováno v:
Journal of Electronic Materials. 26:1178-1183
We present a comprehensive study on the growth of AlGaAs by using an alternative Al precursor, dimethylethylamine alane (DMEAA), and a Ga coprecursor, either triethylgallium (TEG) or trimethylgallium (TMG). The growth rate of AlAs determined by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e97a0e4ec52349e9c29141b531329dd
https://doi.org/10.1007/s11664-997-0016-9
https://doi.org/10.1007/s11664-997-0016-9
Publikováno v:
Journal of Crystal Growth. 174:564-571
In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial metal organic chemical vapor deposition reactor to measure growth rates of compound semiconductor films. The technique serves as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ad93007e78b955df372ee55ae88d8f
https://doi.org/10.1016/s0022-0248(97)00020-1
https://doi.org/10.1016/s0022-0248(97)00020-1
High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium
Autor:
Thomas M. Brennan, K.H. Chang, H.C. Lee, B. E. Hammons, William G. Breiland, Robert M. Biefeld, Piotr Grodzinski, M.H. Kim, Eric D. Jones, H.C. Chui
Publikováno v:
Journal of Crystal Growth. 163:212-219
We have grown high purity AlGaAs by metalorganic chemical vapor deposition using tertiarybutylarsine (TBA), trimethylgallium, and trimethylaluminum. We have achieved p-type carrier concentrations less than 4 × 10 14 cm −3 and a mobility of 1015 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886cca40d68b9a6bb615f63ff5d6735b
https://doi.org/10.1016/0022-0248(95)00984-1
https://doi.org/10.1016/0022-0248(95)00984-1
Autor:
A.G. Thompson, J. Hennessy, M. McKee, N.J. Bulitka, William G. Breiland, K. Moy, P. Esherick, E. Wolak, G.H. Evans, C.J.L. Moore, Peter A. Zawadzki, Alexander I. Gurary, Gary S. Tompa
Publikováno v:
Journal of Crystal Growth. 145:655-661
The optoelectronic and digital compound semiconductor electronics industry is a critical area of development for the 90's and into the next century. Optoelectronic devices are used in all aspects of communications (lasers and detectors) and displays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72948317537d4bb8ad02f7babcfb77f
https://doi.org/10.1016/0022-0248(94)91122-3
https://doi.org/10.1016/0022-0248(94)91122-3