Zobrazeno 1 - 2
of 2
pro vyhledávání: '"William Francis Kraus"'
Autor:
Stephen Heinrich-Barna, Robert A. Glazewski, Saim Ahmad Qidwai, Scott L. Leisen, William Francis Kraus
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
Sense Amplifiers have always been an integral part of an embedded memory design and operation. The decreasing process size, appetite for speed, low power, and smaller area all contribute to increased Sense Amplifier (SA) offset. In FRAM technologies,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::538af98e65a7c33c7db04650d0e30e20
https://doi.org/10.1109/imw.2014.6849368
https://doi.org/10.1109/imw.2014.6849368
Autor:
Kunal Gandhi, Saim Ahmad Qidwai, Scott R. Summerfelt, Subir Chowdhury, Scott L. Leisen, Steve Heinrich-Barna, William Francis Kraus, Robert A. Glazewski
Publikováno v:
2012 4th IEEE International Memory Workshop.
A 17.2 ns access and 20.5 ns cycle 64 kB (2T2C) FRAM in 130 nm was demonstrated. This is the fastest FRAM at 1.57V to be reported to date based on silicon data. The FRAM used a unique timing controller (UTC) that characterized the switching behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58ad7d2eab937dd927ca0999dadd510c
https://doi.org/10.1109/imw.2012.6213654
https://doi.org/10.1109/imw.2012.6213654