Zobrazeno 1 - 10
of 18
pro vyhledávání: '"William F. Landers"'
Autor:
Neereja Sundaresan, Giacomo Nannicini, Daniela F. Bogorin, Petar Jurcevic, Adinath Narasgond, Oliver Dial, Emily J. Pritchett, Jay M. Gambetta, K. X. Wei, Christopher J. Wood, Toshinari Itoko, Eric J. Zhang, Markus Brink, Hasan M. Nayfeh, Ali Javadi-Abhari, Oktay Günlük, Kevin Krsulich, Srikanth Srinivasan, Isaac Lauer, William F. Landers, Jeng-Bang Yau, Eric P. Lewandowski, Naoki Kanazawa, George A. Keefe, Abhinav Kandala, Mary Beth Rothwell, Lev S. Bishop, Douglas McClure, Lauren Capelluto, Jerry M. Chow, Cindy Wang
We improve the quality of quantum circuits on superconducting quantum computing systems, as measured by the quantum volume, with a combination of dynamical decoupling, compiler optimizations, shorter two-qubit gates, and excited state promoted readou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f86eed5c93d420a7ba39254b449133f
Autor:
Jinping Liu, Mukta G. Farooq, J A Oakley, William F. Landers, Subramanian S. Iyer, Daniel Berger, S Butt, John M. Safran, P Kulkarni-Kerber, Norman Robson, C. Kothandaraman, Troy L. Graves-Abe, J Xumalo, P. Oldiges, Sami Rosenblatt
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf357efaf57e44a251500296901d5eb
https://doi.org/10.1109/iedm.2016.7838384
https://doi.org/10.1109/iedm.2016.7838384
Autor:
William F. Landers, C. Kothandaraman, Christopher N. Collins, Steven W. Mittl, G. La Rosa, Mukta G. Farooq, F. Chen, Prakash Periasamy, Subramanian S. Iyer, Dimitris P. Ioannou, Jinping Liu, Daniel Berger, John M. Safran, Jennifer A. Oakley, Ghosh Somnath, Carole D. Graas, Troy L. Graves-Abe
Publikováno v:
IRPS
We integrated a copper TSV (Through Silicon Via) cell in a qualified 32SOI CMOS logic technology with high-K/metal gate and DT (Deep Trench) capacitors. Extensive wafer level characterization and reliability stressing were performed to evaluate the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a81b53f4f79b8a62370ad073642f86c
https://doi.org/10.1109/irps.2015.7112732
https://doi.org/10.1109/irps.2015.7112732
Autor:
S.S. Iyer, Jennifer A. Oakley, Troy L. Graves-Abe, William F. Landers, K. Tunga, John M. Safran, Kevin S. Petrarca, Sami Rosenblatt, C. Kothandaraman, Mukta G. Farooq, Christopher N. Collins, Stephan A. Cohen, Christopher Parks, Andrew J. Martin, Jinping Liu, John W. Golz, Norman Robson
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57741118a1d4dc6ca1cf76ef2754b025
https://doi.org/10.1109/iedm.2014.7047053
https://doi.org/10.1109/iedm.2014.7047053
Autor:
Norman Robson, S.S. Iyer, John M. Safran, Benjamin Himmel, G. LaRosa, Troy L. Graves-Abe, John W. Golz, F. Chen, William F. Landers, Kevin S. Petrarca, Timothy D. Sullivan, C. Kothandaraman, Mukta G. Farooq, Robert Hannon, Richard P. Volant, Gary W. Maier
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Differential thermal expansion mismatch between Cu and Si along with high aspect ratios required for TSV pose unique challenges to the integration and reliability of Cu TSV. A TSV structure that successfully mitigates these concerns has been integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d44fc9f26f780864799e9d9e4cfa4c87
https://doi.org/10.1109/irps.2012.6241774
https://doi.org/10.1109/irps.2012.6241774
Autor:
Michael J. Shapiro, Mukta G. Farooq, William F. Landers, Robert Hannon, Daniel Berger, S.S. Iyer, Troy L. Graves-Abe, F. Chen, R. Liptak, Kevin R. Winstel, Benjamin Himmel, Richard P. Volant, John M. Safran, P.S. Andry, Edmund J. Sprogis, Kevin S. Petrarca, Cornelia K. Tsang, Timothy D. Sullivan, Chandrasekharan Kothandaraman
Publikováno v:
2011 International Electron Devices Meeting.
Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e539b2c203f93525e69ce3527b3369c
https://doi.org/10.1109/iedm.2011.6131504
https://doi.org/10.1109/iedm.2011.6131504
Autor:
Laertis Economikos, Gerhard Lembach, Fen Chen, Dimitri R. Kioussis, Moosung Chae, Thom Gow, Theo Standaert, Jihong Choi, Vinayan C. Menon, Youngjin Choi, Joseph Linville, Wai-kin Li, Ravi Prakash Srivastava, Ronald G. Filippi, Edward Engbrecht, Sujatha Sankaran, Vincent J. McGahay, Wei-Tsu Tseng, Lee M. Nicholson, Kenneth M. Davis, Glenn A. Biery, Naftali E. Lustig, Anthony D. Lisi, Hermann Wendt, Kaushik A. Kumar, Kaushik Chanda, P. McLaughlin, Oscar Bravo, William F. Landers, Frieder H. Baumann, Tibor Bolom, Andrew H. Simon, Allen H. Gabor, Carsten Peters, Craig Child
Publikováno v:
MRS Proceedings. 1079
A tool has been developed that can be used to characterize or validate a BEOL interconnect technology. It connects various process assumptions directly to electrical parameters including resistance. The resistance of narrow copper lines is becoming a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2407a7a769197d96ae3e99aa87c2ec1a
https://doi.org/10.1557/proc-1079-n02-01
https://doi.org/10.1557/proc-1079-n02-01
Autor:
Eva E. Simonyi, William F. Landers, T. H. Ivers, Thomas M. Shaw, K. Ida, D. Jung, Sujatha Sankaran, Kaushal Patel, Johnny Widodo, Naftali E. Lustig, M. Chae, Kaushik Chanda, G. A. Biery, Wan-jae Park, J. Sucharitaves, W. Liu, T. Ko, Christos D. Dimitrakopoulos, M. Kelling, Stephen M. Gates, R. G. Filippi, D. Nielsen, John A. Fitzsimmons, O. Bravo, M. Beck, Satya V. Nitta, Terry A. Spooner, L. Economikos, T. Bolom, Alfred Grill, John G. Pellerin, X. Liu, Eric G. Liniger, G. Matusiewicz, E. Kaltalioglu, C. Tian, Mukta G. Farooq, F. Chen, David L. Rath, Griselda Bonilla, D. Nguyen, Nicholas C. M. Fuller, P. Davis, S. Arai, Daniel C. Edelstein, J.P. Doyle, Kevin S. Petrarca, P. Ong, Kaushik A. Kumar, H. Wendt, L. Wiggins, V. Patel, Stephan Grunow, W. Li, L. Nicholson, I. Melville, Sanjay Mehta, Stephen E. Greco, J. Werking, Robert L. Wisnieff, B. Moon, Darryl D. Restaino, S. Marokkey, R. Hannon, Myoung-Bum Lee, Theodorus E. Standaert, Shom Ponoth, Paul S. McLaughlin, R. Augur, P. V. McLaughlin, C. Labelle, A. Cowley, H. Shoba, S. Rhee, K. Malone, Stephan A. Cohen, Michael Lane, E.T. Ryan, H. Landis, Larry Clevenger, James R. Lloyd, James J. Demarest, Andrew H. Simon, K. Miyata
Publikováno v:
2006 International Electron Devices Meeting.
A high performance 45nm BEOL technology with proven reliability is presented. This BEOL has a hierarchical architecture with up to 10 wiring levels with 5 in PECVD SiCOH (k=3.0), and 3 in a newly-developed advanced PECVD ultralow-k (ULK) porous SiCOH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f866f42f2dc1939f7fea86854709e4
https://doi.org/10.1109/iedm.2006.346782
https://doi.org/10.1109/iedm.2006.346782
Autor:
E. Duchesne, T. Ivers, C.-C. Yang, Clare Johanna Mccarthy, D. Hawken, Charles R. Davis, Timothy H. Daubenspeck, M. Cullinan, Larry Clevenger, J. Wright, T. Aoki, James J. Demarest, C. Das, Jon A. Casey, T. Shaw, Michael Lane, Daniel C. Edelstein, J. Nadeau-Filteau, Thomas E. Lombardi, A. Cowley, William F. Landers, David L. Questad, F. Beaulieu, X.-H. Liu, Wolfgang Sauter, Christopher D. Muzzy, Luc Guerin
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A summary of chip-to-package interaction (CPI) evaluations for a 90 nm PECVD low k technology will be discussed. This review will cover a 90 nm technology that uses Cu dual damascene interconnections with a SiCOH (K /spl sim/ 3.0) CVD BEOL insulator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f471dd0cf5b4dde286b7a7fc3e854f0
https://doi.org/10.1109/iitc.2004.1345706
https://doi.org/10.1109/iitc.2004.1345706
Autor:
W.-K. Li, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, K. Ida, C.-C. Yang, Jeremy L. Martin, S. Vogt, T. Van Kleeck, Jason Gill, David L. Questad, Philip L. Flaitz, William F. Landers, X.-H. Liu, Christopher D. Muzzy, T. Ivers, T. Shaw, Kaushik Chanda, J. Wright, M. Cullinan, Takeshi Nogami, A. Sakamoto, Son Nguyen, Larry Clevenger, W. Cote, M. Yoon, A. Cowley, S. Tempest, Charles R. Davis, Daniel C. Edelstein, David P. Klaus, James J. Demarest, Andrew H. Simon, Swastika N. Das, Anita Madan, C. Parks, Stephen M. Gates, W. Wille, Darryl D. Restaino, John A. Fitzsimmons, S. Molis, Du Binh Nguyen, R. G. Filippi, Birendra N. Agarwala, D. Hawken, S. Arai, M. Ono, N. Klymko, Y.-H. Lin, A. Carbone, Joe Lee, Hazara S. Rathore, Derren N. Dunn, Alfred Grill, Eric G. Liniger, S. Lane, Y. Shimooka, Yanfeng Wang, Sandra G. Malhotra, Timothy J. Dalton, P. Davis, E. Simonyi
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7517d96a0646167b24ad2d088b95274a
https://doi.org/10.1109/iitc.2004.1345750
https://doi.org/10.1109/iitc.2004.1345750