Zobrazeno 1 - 10
of 49
pro vyhledávání: '"William E. Tennant"'
Publikováno v:
Journal of Electronic Materials. 39:1001-1006
Strained-layer superlattices (SLS) based on type II InAs/Ga(In)Sb materials are a rapidly maturing technology and are theoretically predicted to exceed the dark-current performance of state-of-the-art HgCdTe. A substantial effort is underway at Teled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1e86536f9b4dc1d6ad7a5196a040d6
https://doi.org/10.1007/s11664-010-1091-x
https://doi.org/10.1007/s11664-010-1091-x
Autor:
Jerry R. Meyer, Igor Vurgaftman, Joseph G. Tischler, William E. Tennant, K. A. Olver, Chadwick L. Canedy, S. P. Powell, Edward H. Aifer, Jeffrey H. Warner, Eric M. Jackson
Publikováno v:
Journal of Electronic Materials. 39:1070-1079
Shallow-etch mesa isolation (SEMI) of graded-bandgap “W”-structured type II superlattice (GGW) infrared photodiodes provides a powerful means for reducing excess dark currents due to surface and bulk junction related processes, and it is particul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31b347a9af50def76c542708a7373f6
https://doi.org/10.1007/s11664-009-1056-0
https://doi.org/10.1007/s11664-009-1056-0
Autor:
Edward H. Aifer, William E. Tennant, Jerry R. Meyer, Jeffrey H. Warner, K. A. Olver, Igor Vurgaftman, Eric M. Jackson, Joseph G. Tischler, Chadwick L. Canedy, S. P. Powell
Publikováno v:
Infrared Physics & Technology. 52:326-334
Limiting the defect-mediated dark currents in type-II superlattice (T2SL) IR photodiodes remains the key challenge to focal plane arrays (FPAs) based on this material system. In spite of its larger effective mass to suppress tunneling and more than a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5019f0ebe7b6d3ecee6c01087dce34bf
https://doi.org/10.1016/j.infrared.2009.09.004
https://doi.org/10.1016/j.infrared.2009.09.004
Autor:
William W. Bewley, William E. Tennant, D. D. Edwall, M. L. Thomas, James R. Lindle, E. Piquette, Igor Vurgaftman, Jerry R. Meyer
Publikováno v:
Journal of Electronic Materials. 36:988-992
We used an InSb radiometric thermal imager to characterize the performance of 1″ × 1″ negative luminescent (NL) arrays. The devices grown on both CdZnTe (two arrays) and silicon (three arrays) as substrates have cut-off wavelengths ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc2f7ad8535bdb0cb1a767ab441e280
https://doi.org/10.1007/s11664-007-0152-2
https://doi.org/10.1007/s11664-007-0152-2
Autor:
J. L. Johnson, Jerry R. Meyer, James R. Lindle, William W. Bewley, Edward P. Smith, Scott M. Johnson, E. Piquette, M. L. Thomas, Igor Vurgaftman, William E. Tennant
Publikováno v:
Journal of Electronic Materials. 35:1391-1398
Negative luminescence (NL) refers to the suppression of infrared blackbody emission, and hence an apparent temperature reduction, due to free carrier extraction from a reverse-biased p-n junction. A number of applications are envisioned for NL device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056e37192a7689443a25202f3b607f21
https://doi.org/10.1007/s11664-006-0273-z
https://doi.org/10.1007/s11664-006-0273-z
Autor:
James R. Lindle, E. Piquette, Chul Soo Kim, M. L. Thomas, Igor Vurgaftman, William W. Bewley, J. L. Johnson, Jerry R. Meyer, William E. Tennant
Publikováno v:
IEEE Journal of Quantum Electronics. 41:227-233
We demonstrate the substantial suppression of infrared (IR) blackbody emission from HgCdTe photodiode arrays with cutoff wavelengths of 4.8, 5.5, and 6.0 /spl mu/m. At room temperature, a reverse bias induces internal negative luminescence (NL) effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0a1e87beffbebd9620ca1cdd473c57
https://doi.org/10.1109/jqe.2004.839721
https://doi.org/10.1109/jqe.2004.839721
Autor:
M. L. Thomas, J. L. Johnson, E. Piquette, William W. Bewley, Igor Vurgaftman, James R. Lindle, Jerry R. Meyer, William E. Tennant
Publikováno v:
Journal of Electronic Materials. 33:600-603
The negative luminescence (NL) efficiency of a 5 mm×5 mm array (100% effective fill factor) of HgCdTe photodiodes (λco=4.8 µm at 295 K) has been measured as a function of temperature. The internal NL efficiency of ≈95% at λ=4 µm is nearly inde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b851dc158df77900445f1576b9d20efd
https://doi.org/10.1007/s11664-004-0053-6
https://doi.org/10.1007/s11664-004-0053-6
Autor:
J. L. Johnson, M. L. Thomas, Jerry R. Meyer, Igor Vurgaftman, James R. Lindle, William W. Bewley, William E. Tennant
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:558-562
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ac8b96d2c082235cbbdcc03f134aa4
https://doi.org/10.1016/j.physe.2003.09.009
https://doi.org/10.1016/j.physe.2003.09.009
Autor:
M. L. Thomas, G. Hildebrand, M. Muzilla, John H. Dinan, V. Gil, Lester J. Kozlowski, Andrew J. Stoltz, William E. Tennant, P. Ely, D. D. Edwall, M. Zandian, K. Spariosu, W. V. McLevige
Publikováno v:
Journal of Electronic Materials. 30:590-594
In the last few years Rockwell has developed a novel simultaneous unipolar multispectral integrated HgCdTe detector and focal plane array technology that is a natural and relatively straightforward derivative of our baseline double layer planar heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9ba8d9206ef7eaedf22b21984cc1dc
https://doi.org/10.1007/bf02665839
https://doi.org/10.1007/bf02665839
Publikováno v:
Journal of Electronic Materials. 28:582-588
Over the last several years cooled applications of HgCdTe at low temperatures have proliferated. Having low fundamental dark current at any given wavelength and temperature makes HgCdTe attractive for high temperature applications as well. We are exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3977d0f523baad450ce2ba2a797d1c3a
https://doi.org/10.1007/s11664-999-0039-5
https://doi.org/10.1007/s11664-999-0039-5