Zobrazeno 1 - 10
of 90
pro vyhledávání: '"William E. Hoke"'
Autor:
Joel M. Fastenau, Mayank T. Bulsara, Y. Wu, Eugene A. Fitzgerald, Dmitri Lubyshev, William E. Hoke, K.J. Herrick, Dave A. Smith, Robin. F. Thompson, Nicolas Daval, D. T. Clark, J.R. LaRoche, J. Bergman, Miguel Urteaga, W. K. Liu, T.E. Kazior, Charlotte Drazek, W. Ha, Bobby Brar
Publikováno v:
Journal of Crystal Growth. 311:1979-1983
We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::597977e963eac1d0ac7399f886e24240
https://doi.org/10.1016/j.jcrysgro.2008.10.061
https://doi.org/10.1016/j.jcrysgro.2008.10.061
Autor:
Dmitri Lubyshev, M. Urtega, J. Bergman, W. K. Liu, Joel M. Fastenau, Mayank T. Bulsara, Fabrice Letertre, Y. Wu, W. Ha, Bobby Brar, William E. Hoke, Charlotte Drazek, Yu Bai, Cheng-Wei Cheng, T.E. Kazior, K.J. Herrick, Nicolas Daval, Eugene A. Fitzgerald, J.R. LaRoche
Publikováno v:
ECS Transactions. 16:1015-1020
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7635c4bf27c275030c141eb864dd3365
https://doi.org/10.1149/1.2986863
https://doi.org/10.1149/1.2986863
Autor:
C.S. Whelan, C. Xu, R.E. Leoni, Jae-Hyung Jang, P.F. Marsh, William E. Hoke, Y. Zhang, Ilesanmi Adesida, A. Torabi, T. D. Kennedy, K. C. Hsieh, S.M. Lardizabal
Publikováno v:
Journal of Crystal Growth. 251:804-810
Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2272d2578368027d998b1a578ae63a
https://doi.org/10.1016/s0022-0248(02)02374-6
https://doi.org/10.1016/s0022-0248(02)02374-6
Autor:
P. Balas, C.S. Whelan, Thomas E. Kazior, Y. Zhang, P.F. Marsh, S.J. Lichwala, William E. Hoke, R.E. Leoni, Steven M. Lardizabal
Publikováno v:
International Journal of High Speed Electronics and Systems. 13:65-89
GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs is eliminated in metamorphic devices by providing a properly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c026ce8de03f6f072b0cc660193b07
https://doi.org/10.1142/s0129156403001533
https://doi.org/10.1142/s0129156403001533
Publikováno v:
Journal of Lightwave Technology. 20:507-514
High-speed metamorphic double heterojunction photodiodes were fabricated on GaAs substrates for long-wavelength optical fiber communications. The high quality linearly graded quaternary InGaAlAs metamorphic buffer layer made possible the growth of ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a40900d19cd535dd1951cac623232c
https://doi.org/10.1109/50.989001
https://doi.org/10.1109/50.989001
Publikováno v:
Physical Review B. 89
Strained transition layers, which are common for heteroepitaxial growth of functional semiconductors on foreign substrates, include high defect densities that impair heat conduction. Here, we measure the thermal resistances of AlN transition layers f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69d507b025994dcbba5d8a36377ca1d
https://doi.org/10.1103/physrevb.89.115301
https://doi.org/10.1103/physrevb.89.115301
Autor:
A. Torabi, K. C. Hsieh, R. M. Beaudoin, L.-J. Chou, P. S. Lyman, W. A. Bonner, R. A. McTaggart, J. J. Mosca, P. J. Lemonias, William E. Hoke, B. Lent
Publikováno v:
Journal of Applied Physics. 82:3576-3580
Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1−xAs (x=0.025–0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5543096691b7043cb72ca413d939584
https://doi.org/10.1063/1.365676
https://doi.org/10.1063/1.365676
Autor:
W. A. Bonner, P. S. Lyman, A. Torabi, J. J. Mosca, L.-J. Chou, William E. Hoke, H. T. Hendriks, K. C. Hsieh, B. Lent
Publikováno v:
Journal of Applied Physics. 81:968-973
Single and double pulse doped pseudomorphic high electron mobility transistor structures with 110-A-thick InGaAs channel layers have been grown on InxGa1−xAs substrates (x=0.04; 0.065) and GaAs substrates. For In0.23Ga0.77As channel layers, higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad1c99e62a9468cde29cd725f8fe49f
https://doi.org/10.1063/1.364134
https://doi.org/10.1063/1.364134
Autor:
R.E. Leoni, C.S. Whelan, William E. Hoke, Thomas E. Kazior, P.F. Marsh, J.B. Hunt, C.M. Laighton, Y. Zhang
Publikováno v:
IEEE Electron Device Letters. 24:529-531
An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd4911cf1a41363615304b74ad8291c8
https://doi.org/10.1109/led.2003.815432
https://doi.org/10.1109/led.2003.815432
Publikováno v:
IEEE Photonics Technology Letters. 15:281-283
Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the device heterostructure was examined by measuring wavelength dependent responsivities and ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f9791bfb21965772464332eec06230
https://doi.org/10.1109/lpt.2002.806886
https://doi.org/10.1109/lpt.2002.806886