Zobrazeno 1 - 10
of 10
pro vyhledávání: '"William Dickerson"'
Autor:
Guillaume Gervais, Maurizio Peruzzini, Matei Petrescu, N. Hemsworth, Stefan Heun, Manuel Serrano-Ruiz, Oulin Yu, Matteo Carrega, Thomas Szkopek, David Graf, William Dickerson, Francesca Telesio, Maria Caporali, V. Tayari
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters
Physica status solidi. Rapid research letters
14 (2020). doi:10.1002/pssr.201900347
info:cnr-pdr/source/autori:Telesio F.; Hemsworth N.; Dickerson W.; Petrescu M.; Tayari V.; Yu O.; Graf D.; Serrano-Ruiz M.; Caporali M.; Peruzzini M.; Carrega M.; Szkopek T.; Heun S.; Gervais G./titolo:Nonclassical Longitudinal Magnetoresistance in Anisotropic Black Phosphorus/doi:10.1002%2Fpssr.201900347/rivista:Physica status solidi. Rapid research letters (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Physica status solidi. Rapid research letters
14 (2020). doi:10.1002/pssr.201900347
info:cnr-pdr/source/autori:Telesio F.; Hemsworth N.; Dickerson W.; Petrescu M.; Tayari V.; Yu O.; Graf D.; Serrano-Ruiz M.; Caporali M.; Peruzzini M.; Carrega M.; Szkopek T.; Heun S.; Gervais G./titolo:Nonclassical Longitudinal Magnetoresistance in Anisotropic Black Phosphorus/doi:10.1002%2Fpssr.201900347/rivista:Physica status solidi. Rapid research letters (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a877622a263f35af504b40143036c585
http://arxiv.org/abs/1808.00858
http://arxiv.org/abs/1808.00858
Publikováno v:
2018 IEEE Power & Energy Society General Meeting (PESGM).
The definition, measurement, and interpretation of the frequency of a power system is a challenging problem without (so far) a satisfying solution. Power engineers may be drawn to a definition that does not require a particular procedure to be follow
Autor:
Andrew J. Roscoe, Paul S. Wright, Harold Kirkham, Roel de Vries, William Dickerson, Kenneth E. Martin, Allen Goldstein
Publikováno v:
First International Colloquium on Smart Grid Metrology
Measurement uncertainty, in general terms, is an expression of the quality of a measurement. It is typically quan- tified by defining the location and spread of the distribution of a hypothetical infinitely large number of measurements of the thing b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9fd02bbfecd76135a168a1ef0c6721d
https://strathprints.strath.ac.uk/63577/1/Dickerson_etal_SmaGriMet2018_Smart_grid_measurement_uncertainty.pdf
https://strathprints.strath.ac.uk/63577/1/Dickerson_etal_SmaGriMet2018_Smart_grid_measurement_uncertainty.pdf
Autor:
William Dickerson, Thomas Szkopek, V. Tayari, Guillaume Gervais, N. Hemsworth, O. Cyr-Choinière
Publikováno v:
Physical Review Applied. 5
For the next generation of electronic devices, researchers seek to harness the potential of two-dimensional materials, the most famous being graphene. Unlike graphene, which is a semimetal, black phosphorus is a natural semiconductor with a band gap,
Autor:
William Brown, Matthew Doude, Jonathan D. Moore, Joshua Hoop, William Dickerson, G. Marshall Molen
Publikováno v:
SAE International Journal of Alternative Powertrains. 1:438-457
Autor:
Gianluigi A. Botton, V. Tayari, Thomas Szkopek, Manuel Serrano-Ruiz, Maurizio Peruzzini, Ibrahim Fakih, Stefan Heun, William Dickerson, Andreas Korinek, Maria Caporali
Publikováno v:
Applied physics letters 112 (2018). doi:10.1063/1.5011424
info:cnr-pdr/source/autori:W. Dickerson, V. Tayari, I. Fakih, A. Korinek2, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, and T. Szkopek/titolo:Phosphorus oxide gate dielectric for black phosphorus field effect transistors/doi:10.1063%2F1.5011424/rivista:Applied physics letters/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:112
Applied Physics Letters
info:cnr-pdr/source/autori:W. Dickerson, V. Tayari, I. Fakih, A. Korinek2, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, and T. Szkopek/titolo:Phosphorus oxide gate dielectric for black phosphorus field effect transistors/doi:10.1063%2F1.5011424/rivista:Applied physics letters/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:112
Applied Physics Letters
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence effici
Autor:
William Dickerson
Publikováno v:
AMPS
Phasor measurement unit (PMU) performance depends on the performance of the PMU’s analog input section and the limitations of its DSP algorithms. For the different PMU performance requirements established in the standards, the relative importance o
Publikováno v:
Applied Physics Letters. 107:243103
Free-standing films of reduced graphene oxide were prepared by evaporative drying of drop-cast graphene oxide followed by thermal reduction. The electrical resistance of reduced graphene oxide films showed a strong temperature dependence, reaching a
Publikováno v:
The Journal of the American Osteopathic Association. 84:59-66
Publikováno v:
Chest. 76:240-241