Zobrazeno 1 - 10
of 32
pro vyhledávání: '"William D. Mitchell"'
Publikováno v:
The American Surgeon™. :000313482311750
Multidisciplinary clinics (MDCs) were created at high-volume surgical oncology centers to optimize breast cancer care, in which patients are seen by multiple subspecialists at one visit. We aim to evaluate our experience with this novel approach. We
Parkinson’s disease is a widespread condition caused by degeneration of dopamine neurons in the midbrain. A number of proteins are known to be important to signalling mechanisms present in the midbrain during natural dopamine neuron development, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12862459f28ee886fb5a1b6f86cbb1b2
https://doi.org/10.7287/peerj.preprints.26443v2
https://doi.org/10.7287/peerj.preprints.26443v2
Publikováno v:
Materials Science Forum. :517-522
The high resistivity of SiC required for many device applications is achieved by compensating residual donors or acceptors with vanadium or intrinsic defects. This work addresses the defect levels of substitutional vanadium and the positively charged
Publikováno v:
Journal of Electronic Materials. 35:599-604
Magnetoresistance measurements were performed on van der Pauw shaped AlGaN/GaN heterostructures grown on either sapphire or silicon carbide. These measurements revealed the presence of Shubnikov-de Haas oscillations. However, the amplitude of the osc
Publikováno v:
Physica B: Condensed Matter. :346-349
Electron paramagnetic resonance (EPR) and temperature-dependent Hall measurements were performed on seven different vanadium-doped semi-insulating SiC samples. Comparison of the EPR data and carrier activation energy suggests that the acceptor level
Autor:
V. V. Konovalov, William C. Mitchel, G. Landis, William D. Mitchell, Mary Ellen Zvanut, Haiyan Wang
Publikováno v:
Journal of Applied Physics. 96:5484-5489
Electron paramagnetic resonance (EPR) spectroscopy and photo-induced EPR are used to examine the point defects in vanadium-doped 4H–SiC and high-purity semi-insulating (HPSI) 4H–SiC grown by physical vapor transport. Both types of samples often e
Publikováno v:
Solid-State Electronics. 48:1693-1697
High temperature Hall effect and resistivity measurements have been made on semi-insulating 4H–SiC samples. Both vanadium doped and undoped materials have been studied. Resistivity measurements before and after annealing up to 1800 °C are also rep
Autor:
Thomas Gehrke, P. Rajagopal, R. Berney, W. C. Mitchel, Kevin J. Linthicum, John C. Roberts, Said Elhamri, Edwin L. Piner, William D. Mitchell
Publikováno v:
Journal of Applied Physics. 95:7982-7989
densities greater than 1 x 10 13 cm -2 and Hall mobilities in excess of 1500 cm 2 /Vs were measured at room temperature. Variable field Hall measurements at low temperatures, and in magnetic fields up to 6 T, indicated that conduction is dominated by
Autor:
S. N. Lukin, William D. Mitchell, William C. Mitchel, Ekaterina N. Kalabukhova, Dariya Savchenko
Publikováno v:
Materials Science Forum. :501-504
Publikováno v:
Materials Science Forum. :489-492