Zobrazeno 1 - 7
of 7
pro vyhledávání: '"William Chiappim Junior"'
Publikováno v:
Silicon Carbide Technology for Advanced Human Healthcare Applications ISBN: 9780323906098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dfa21aa37dfe80f9002c6fbfb21dab
https://doi.org/10.1016/b978-0-323-90609-8.00004-1
https://doi.org/10.1016/b978-0-323-90609-8.00004-1
Autor:
Joaquim P. Leitão, William Chiappim Junior, Rodrigo Sávio Pessoa, António F. da Cunha, Leandro Xavier Moreno, Pedro M. P. Salomé
Thin-film solar cells have the potential to require only a fraction of the material, and energy in comparison to the widely used silicon cells, deserving attention of the scientific community. Indeed, thin-film solar cells of Cu(In,Ga)Se2 (CIGS) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca85ede9499420fa4d7973e59110efa
https://doi.org/10.1016/b978-0-12-821592-0.00020-0
https://doi.org/10.1016/b978-0-12-821592-0.00020-0
The atomic layer deposition (ALD) is not only an ultrathin film technology used in semiconductor industries. Lately, it has been found in many applications in the renewable energy field due to its precise control of thickness of up to a few angstroms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62bf411489b0567955039a2bdc067843
https://doi.org/10.1016/b978-0-12-821592-0.00015-7
https://doi.org/10.1016/b978-0-12-821592-0.00015-7
Autor:
Antonio Abate, Sergio Aina, Melis Özge Alaş, Tolga Altan, Ali Altuntepe, Harish Barshilia, María Bernechea, Pallab Bhattacharya, Nichole C. Cates, William Chiappim Junior, António F. da Cunha, Sudeshna Das Chakraborty, K.T. Drisya, Juan Carlos Durán-Álvarez, Numan Eczacioglu, Mariana Amorim Fraga, Ramón Escobar Galindo, Rükan Genç, Diego Di Girolamo, Isa Gokce, B. Gopal Krishna, Mario Grageda, Nesrine Harfouche, Abdellah Henni, Roberto Jakomin, Amina Karar, Rudy M.S. Kawabata, Matthias Krause, Mahesh Kumar, Joaquim P. Leitão, M. Pilar Lobera, Paula E. Marín, Sonali Mehra, Daniel N. Micha, Yanio E. Milian, Trilochan Mishra, Leandro X. Moreno, Giuseppe Nasti, K. Niranjan, María Dolores Perez, Rodrigo Savio Pessoa, Mauricio P. Pires, Juan Plá, Fernando A. Ponce, Jessica C. Ramirez de la Torre, Ganesh Regmi, J.J. Ríos-Ramírez, Araceli Romero-Nuñez, Pedro M.P. Salomé, Jyoti Saroha, Ayse Seyhan, Savita Sharma, Shailesh Narain Sharma, Myriam Solís-López, Patrícia L. Souza, Velumani Subramaniam, Sanjay Tiwari, Yakup Ulusu, Svetlana Ushak, Recep Zan, Djamal Zerrouki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce533326c1647ec4c18f5859f8ddc1b
https://doi.org/10.1016/b978-0-12-821592-0.00025-x
https://doi.org/10.1016/b978-0-12-821592-0.00025-x
Autor:
Sebastião G. Dos Santos Filho, Marcos N. Watanabe, Joao Antonio Martino, William Chiappim Junior, Fernando L. N. Santos
Publikováno v:
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
This work proposes bifacial tandem solar panels with MOS cells on the backside aiming at applications in deserts. MOS solar cells were fabricated using Al(200nm)/ Mg(30nm)/SiO 2 (1.73nm)/Si-p structures. The gate oxide was grown by rapid thermal proc
Autor:
Homero Santiago Maciel, Rodrigo Sávio Pessoa, William Chiappim Junior, Gilberto Petraconi Filho, G. E. Testoni
Publikováno v:
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
Titanium dioxide (TiO( 2 ) thin films were deposited on conductive (titanium and fluorine tin oxide glass), insulant (mica, cover glass and thermal SiO( 2 thin film on silicon) and semiconductive (silicon (100) and 4H-SiC) substrates by atomic layer
Autor:
Fábio Izumi, Marcos N. Watanabe, Veronica Christiano, Sebastião G. Dos Santos Filho, William Chiappim Junior
Publikováno v:
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
This paper discusses the metal-oxidesemiconductor (MOS) solar cells for energy harvesting applications using Al(200nm)/SiO 2 (1.73nm)/Si-p and Al(200nm)/Mg(30nm)/SiO 2 (1.73nm)/Si-p structures. P-type (100) silicon wafers with resistivity of 10 $\Ome