Zobrazeno 1 - 10
of 41
pro vyhledávání: '"William Cheng-Yu Ma"'
Autor:
William Cheng-Yu Ma, Yan-Jia Huang, Po-Jen Chen, Jhe-Wei Jhu, Yan-Shiuan Chang, Ting-Hsuan Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 724-730 (2020)
In this work, the high-performance junctionless-mode (JL) and low-power inversion-mode (IM) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with nanosheet channels (less than 10-nm in thickness) are vertically integrated in monolithic
Externí odkaz:
https://doaj.org/article/a3ef26a10aaf4b6ba9d19bccdaafe40b
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Publikováno v:
IEEE Transactions on Electron Devices. 69:6072-6077
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16de1a1a97238c30302c1ff2f45cfc
https://doi.org/10.1109/ted.2022.3208847
https://doi.org/10.1109/ted.2022.3208847
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
Autor:
Cai-Jia Tsai, William Cheng-Yu Ma
Publikováno v:
IEEE Transactions on Electron Devices. 68:6171-6176
In this work, impacts of the independent dual-gate (IDG) operation on performance and reliability of the polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) with a nanosheet channel (~4 nm) are investigated. Compared to the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62d050bc2990ae65dbeeb0fd35e45243
https://doi.org/10.1109/ted.2021.3117901
https://doi.org/10.1109/ted.2021.3117901
Autor:
Chia-Chuan Wu, William Cheng-Yu Ma, Yu-Xuan Wang, Mao-Chou Tai, Yu-An Chen, Hong-Yi Tu, Sheng-Yao Chou, Ya-Ting Chien, Ting-Chang Chang
Publikováno v:
2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::494ef711fe7cba5be594525150d2af3c
https://doi.org/10.1109/iet-iceta56553.2022.9971607
https://doi.org/10.1109/iet-iceta56553.2022.9971607
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Ta-Chun Cho, Jing-Qiang Guo, Cheng-Jun Wu, Po-Ying Wu, Jia-Yuan Hung
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055006
In this work, a ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric HfZrOx gate dielectric is demonstrated with analog memory characteristics for the application of synaptic devices. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b409c5d5acd16480e7e25c6750f5805
https://doi.org/10.1149/2162-8777/acd212
https://doi.org/10.1149/2162-8777/acd212
Publikováno v:
IEEE Transactions on Plasma Science. 49:15-20
In this work, the impacts of oxygen (O2) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O2 plasma treatmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e7202ea8922c6cbe2138a88d736e82
https://doi.org/10.1109/tps.2020.3015729
https://doi.org/10.1109/tps.2020.3015729
Autor:
Shen-Ming Luo, Cai-Jia Tsai, Ming-Jhe Li, Ting-Hsuan Chang, Jiun-Hung Lin, Yan-Shiuan Chang, William Cheng-Yu Ma, Po-Jen Chen, Jhe-Wei Jhu
Publikováno v:
IEEE Transactions on Plasma Science. 49:26-32
The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A −0.785-V threshold voltage ( $V_{\mathrm {TH}}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03bd537feb3add10017e48933782362
https://doi.org/10.1109/tps.2020.3010483
https://doi.org/10.1109/tps.2020.3010483
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:775-780
Various reliability issues of low temperature polycrystalline silicon (LTPS) tunnel field-effect transistor (TFET) are comprehensively studied for the first time and compared with conventional LTPS thin-film transistor (TFT). For the positive and neg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a432073e41dae2b2febb4b98e531595
https://doi.org/10.1109/tdmr.2020.3035336
https://doi.org/10.1109/tdmr.2020.3035336
Autor:
Shen-Ming Luo, William Cheng-Yu Ma
Publikováno v:
IEEE Transactions on Electron Devices. 67:5243-5246
Hot-carrier stress (HCS) characteristics of polycrystalline-silicon (poly-Si) tunnel field-effect thin-film transistors are investigated and compared with the conventional poly-Si thin-film transistors (TFTs). After HCS with ${V}_{{\text {DS}}} = {2}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6f5a8d93a6474558036e9ff4126065
https://doi.org/10.1109/ted.2020.3025741
https://doi.org/10.1109/ted.2020.3025741