Zobrazeno 1 - 10
of 14
pro vyhledávání: '"William C. McColgin"'
Publikováno v:
MRS Proceedings. 994
Dark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db6a1370d1e92321dbb0660c98a11d5
https://doi.org/10.1557/proc-0994-f12-07
https://doi.org/10.1557/proc-0994-f12-07
Publikováno v:
MRS Proceedings. 864
Today's CCD image sensors can provide very high image quality. However, used as a tool, they can also provide a sensitive window into defects in silicon, either intrinsic to the starting wafers or introduced during fabrication. In this paper, we exam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd7b1098e235bca0650d6c57f45d9d1
https://doi.org/10.1557/proc-864-e6.3
https://doi.org/10.1557/proc-864-e6.3
Publikováno v:
MRS Proceedings. 719
Defect engineering principles are integral to the design and manufacture of high-quality CCD image sensors. As examples, we describe the use of epitaxial silicon for defect control, hydrogen passivation of interface defects, and several forms of impu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286671c6c21bc432c93f46750eaea543
https://doi.org/10.1557/proc-719-f5.2
https://doi.org/10.1557/proc-719-f5.2
Publikováno v:
MRS Proceedings. 510
We have extended by five the number of deep-level traps known to create dark current in charge-coupled device (CCD) image sensors. These include Mn, Pt, and three much weaker traps that are as yet unidentified. Using dark current spectroscopy (DCS) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49487acda51d176de55764ec5293a52
https://doi.org/10.1557/proc-510-475
https://doi.org/10.1557/proc-510-475
Publikováno v:
MRS Proceedings. 442
Dark current spectroscopy (DCS) is used to identify the signature of metals that generate dark or leakage current in silicon image sensors. Individual metal atoms or defects are detected by DCS on a pixel-by-pixel basis. DCS is applied here to show h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3143632307a815f37b8872a9c2dc86e3
https://doi.org/10.1557/proc-442-187
https://doi.org/10.1557/proc-442-187
Publikováno v:
MRS Proceedings. 378
We have investigated the role of heavy metals in causing visible pixel defects in Charge Coupled Device (CCD) image sensors. Using a technique we call dark current spectroscopy, we can probe for deep-level traps in the active areas of completed image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb753dd594c92d1a4196c791b7edba39
https://doi.org/10.1557/proc-378-713
https://doi.org/10.1557/proc-378-713
Autor:
J. Kyan, David Newell Nichols, James P. Lavine, Charles V. Stancampiano, J. B. Russell, William C. McColgin
Publikováno v:
MRS Proceedings. 262
The effects of intentional metal contamination on silicon charge-coupled device imagers are reported. Such imagers are both sensitive to and provide sensitive measures of the presence of metals in the fabrication process. High-purity iron, cobalt, ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2737437650848c4dfc05c5f1c8d3b2
https://doi.org/10.1557/proc-262-769
https://doi.org/10.1557/proc-262-769
Publikováno v:
Journal of the American Chemical Society. 100:5622-5626
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb49a4c00d7bdfb67725c650bc4b6eeb
https://doi.org/10.1021/ja00486a007
https://doi.org/10.1021/ja00486a007
Publikováno v:
Chemischer Informationsdienst. 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0554d16d5a1244d25f48cbb1020956ee
https://doi.org/10.1002/chin.197849044
https://doi.org/10.1002/chin.197849044
Publikováno v:
SPIE Proceedings.
A new silylated resist process has been developed that provides the advantages of trilayer photoresist processing in a simpler bilayer format. In this new process, silicon for oxygen plasma etch resistance is added to a conventional photoresist layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f8980613f3903f5833128be2eb2d84
https://doi.org/10.1117/12.968327
https://doi.org/10.1117/12.968327