Zobrazeno 1 - 9
of 9
pro vyhledávání: '"William C. Leipold"'
Autor:
Lars W. Liebmann, Mark A. Lavin, Timothy G. Dunham, Alfred K. K. Wong, William C. Leipold, S. M. Mansfield
Publikováno v:
IBM Journal of Research and Development. 45:651-665
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ad6489662a8833b975d6d0039b1619
https://doi.org/10.1147/rd.455.0651
https://doi.org/10.1147/rd.455.0651
Autor:
James A. Bruce, Dianne L. Sundling, William C. Leipold, William M. Chu, Anne E. McGuire, Scott M. Mansfield, Lars W. Liebmann, Michael Cross, Ioana Graur, Joshua J. Krueger
Publikováno v:
SPIE Proceedings.
Sub-resolution assist features (SRAF) have been shown to provide significant process window enhancement and across chip line-width variation reduction when used in conjunction with modified illumination lithography. Work previously presented at this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d4188effe8b18c3ff569e2345e8974
https://doi.org/10.1117/12.435690
https://doi.org/10.1117/12.435690
Autor:
Timothy G. Dunham, William C. Leipold
Publikováno v:
SPIE Proceedings.
ASIC layout data, which can be large and typically with little hierarchy, can prove challenging for complex optical proximity correction (OPC) operations. Thoughtful coordination between the ASIC library designers and the OPC code developers in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba55329ac0d22e5a320e60c0a48af894
https://doi.org/10.1117/12.410686
https://doi.org/10.1117/12.410686
Autor:
Orest Bula, Jeffrey H. Oppold, William C. Leipold, Edward W. Conrad, Randy W. Mann, Daniel S. Coops, Daniel C. Cole
Publikováno v:
SPIE Proceedings.
Here we discuss the use of well calibrated resist and etch bias models, in conjunction with a fast microlithography aerial image simulator, to predict and 'optimize' the printed shapes through all critical levels in a dense SRAM design. Our key empha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a311a412d8079f311da7963f74241d84
https://doi.org/10.1117/12.354404
https://doi.org/10.1117/12.354404
Autor:
James M. Oberschmidt, Denis Regaill, David S. O'Grady, Lars W. Liebmann, William C. Leipold, Ioana Graur
Publikováno v:
SPIE Proceedings.
While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c42483d0b081e6996769973942eec82
https://doi.org/10.1117/12.354344
https://doi.org/10.1117/12.354344
Autor:
T.E. Feuchtwang, William C. Leipold
Publikováno v:
Surface Science. 50:1-28
The fractional change in the temperature dependent current density and the “logarithmic conductivity” as functions of applied bias are examined for a model thin-film metal-insulator-metal heterojunction. We examine the peaks in these curves for c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b84b70076edc6af8d5682834129b5a93
https://doi.org/10.1016/0039-6028(75)90170-3
https://doi.org/10.1016/0039-6028(75)90170-3
Autor:
William C. Leipold, T.E. Feuchtwang
Publikováno v:
Physical Review B. 10:2195-2204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e05fa322f0f8b755d6a2925a107db0
https://doi.org/10.1103/physrevb.10.2195
https://doi.org/10.1103/physrevb.10.2195
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