Zobrazeno 1 - 10
of 24
pro vyhledávání: '"William B. Ray"'
Autor:
William B. Ray, Joshua Yu, Christopher Thomas, David I. Bigio, Johnny Russo, Stephen B. Bayne, Marc Litz, Hansol Cho, Tariq Rizvi Alam, Gerald M. Rosen
Publikováno v:
Applied Radiation and Isotopes. 144:93-103
Unattended, compact, terrestrial and space sensors require sources that have high energy and power densities to continuously operate for 3 to 99 years depending on application. Currently, chemical sources cannot fully satisfy these applications, espe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a666eb6f5d69869c8aacc1a2601dfa7a
https://doi.org/10.1016/j.apradiso.2018.10.012
https://doi.org/10.1016/j.apradiso.2018.10.012
Publikováno v:
Applied Radiation and Isotopes. 130:66-74
Energy dense power sources are critical to the development of compact, remote sensors for terrestrial and space applications. Nuclear batteries using β--emitting radioisotopes possess energy densities 1000 times greater than chemical batteries. Thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44ddfc5c0269ebe0d1e2f80cf54d4f6
https://doi.org/10.1016/j.apradiso.2017.09.018
https://doi.org/10.1016/j.apradiso.2017.09.018
Publikováno v:
Applied Radiation and Isotopes. 125:66-73
Beta radioisotope energy sources, such as tritium (3H), have shown significant potential in satisfying the needs of a sensor-driven world. The limitations of current beta sources include: (i) low beta-flux power, (ii) intrinsic isotope leakage and (i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c4f9bdad1db90ae98e421650f20d464
https://doi.org/10.1016/j.apradiso.2017.04.013
https://doi.org/10.1016/j.apradiso.2017.04.013
Publikováno v:
Applied Energy. 191:10-21
Low illumination (10 −4 suns) and indoor light energy harvesting is needed to meet the demands of zero net energy (ZNE) building, Internet of Things (IoT), and beta-photovoltaic energy harvesting systems to power remote sensors. Photovoltaic (PV) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d2f176a13e94199c896be98f3ab63a
https://doi.org/10.1016/j.apenergy.2017.01.029
https://doi.org/10.1016/j.apenergy.2017.01.029
Autor:
Bejoy N. Pushpakaran, William B. Ray, Stephen B. Bayne, Emily A. Hirsch, James A. Schrock, Mitchell D. Kelley, Argenis Bilbao, S. Holt
Publikováno v:
IEEE Transactions on Power Electronics. 31:1816-1821
SiC MOSFETs are a leading option for increasing the power density of power electronics; however, for these devices to supersede the Si insulated-gate bipolar transistor, their characteristics have to be further understood. Two SiC vertically oriented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b90e6e7a75aac9b9732c2f2a04eaa4
https://doi.org/10.1109/tpel.2015.2464780
https://doi.org/10.1109/tpel.2015.2464780
Autor:
William B. Ray, Heather O'Brien, Aderinto Ogunniyi, Stephen B. Bayne, Jose A. Rodriguez, Matthew Kim
Publikováno v:
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are an ideal option in applications of power electronics due to the wide-bandgap properties of the material. High electron mobility is gained through the device’s unique channel struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be461067c0955e5acff3f4948cc3774f
https://doi.org/10.1109/ipmhvc.2018.8936768
https://doi.org/10.1109/ipmhvc.2018.8936768
Autor:
Argenis Bilbao, Kevin Lawson, William B. Ray, James A. Schrock, S. Holt, Stephen B. Bayne, John W. Palmour, Lin Cheng, Charles Scozzie
Publikováno v:
IEEE Transactions on Power Electronics. 30:2891-2895
For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high temperatures common in power electronics needs to be further verified. To determine the long-term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb3a9e8e225d7e9c0378b9f1d5890be
https://doi.org/10.1109/tpel.2014.2357013
https://doi.org/10.1109/tpel.2014.2357013
Autor:
Stephen B. Bayne, James A. Schrock, Argenis Bilbao, William B. Ray, K. R. Popp, Matthew Kim, C. Tchoupe-Nono
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are a new technology that is of great interest in pulsed power and power electronics application due to the demonstrated capabilities of Silicon Carbide (SiC) transistors. As there are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17384231853604a883438a12efbb2028
https://doi.org/10.1109/wipda.2016.7799967
https://doi.org/10.1109/wipda.2016.7799967
Autor:
Stephen B. Bayne, William B. Ray, Aderinto Ogunniyi, Heather O'Brien, Argenis Bilbao, Emily A. Hirsch, James A. Schrock, Shelby Lacouture, Michael Giesselmann
Publikováno v:
2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronic systems. However, the transient characteristics and failure modes of these devices have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d328efce1a49c4240741a1d609387756
https://doi.org/10.1109/ipmhvc.2016.8012878
https://doi.org/10.1109/ipmhvc.2016.8012878
Low and indoor light energy harvesting is needed to meet the demands of zero net energy (ZNE) building, Internet of Things (IoT), and indirect energy conversion isotope battery (IDEC iBAT) systems. Characterizing photovoltaic (PV) solar cells under l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0790a02eb947a3758dd044cbc8ffbb
https://doi.org/10.21236/ada625514
https://doi.org/10.21236/ada625514
