Zobrazeno 1 - 7
of 7
pro vyhledávání: '"William Andrew Hennessy"'
Publikováno v:
ECS Transactions. 8:255-260
Large area electronic devices based on amorphous silicon thin film technology are finding increased use in applications including information displays, x-ray detectors, antenna arrays, surveillance radar, and sensors for chem-bio hazard detection. 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3e0febe6021d949320768ca6330ac5
https://doi.org/10.1149/1.2767317
https://doi.org/10.1149/1.2767317
Autor:
T.P. Chow, Mario Ghezzo, D.M. Brown, Vishnu K. Khemka, Philip G. Neudeck, R. Tyagi, William Andrew Hennessy, N. Ramungul, James W. Kretchmer
Publikováno v:
Solid-State Electronics. 42:17-22
The electrical performance of mesa type 6H-SiC p + n junction diodes formed via high temperature implantation of 27 Al and 11 B has been comparatively studied and analyzed at temperatures up to 400°C using the Shockley model and the space-charge-lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66b1484629170662734dbb8e99f2ddce
https://doi.org/10.1016/s0038-1101(97)00217-7
https://doi.org/10.1016/s0038-1101(97)00217-7
Autor:
Evan Downey, James W. Kretchmer, William Andrew Hennessy, D.M. Brown, Gerald J. Michon, Mario Ghezzo, V. Krishnamurthy
Publikováno v:
Solid-State Electronics. 39:1531-1542
The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8b52f0cf42b91b1feb56c341ff6026
https://doi.org/10.1016/0038-1101(96)00079-2
https://doi.org/10.1016/0038-1101(96)00079-2
Autor:
Deva Narayan Pattanayak, William Andrew Hennessy, Bantval Jayant Baliga, Michael S. Adler, C.E. Logan, T.P. Chow
Publikováno v:
IEEE Transactions on Electron Devices. 38:310-315
The static and dynamic interaction between monolithically integrated n- and p-channel, high-voltage lateral insulated-gate bipolar transistors (LGBTs) are studied. In the chosen system partition, three common-source, n-channel LIBGTs are monolithical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8319a938de8ceb481b74c3b32eab7192
https://doi.org/10.1109/16.69911
https://doi.org/10.1109/16.69911
Autor:
K. Shenai, P.A. Piacente, Bantval Jayant Baliga, R. Saia, William Andrew Hennessy, C. S. Korman
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel high-frequency power FET technology is reported that is based on the application of blanket-deposited LPCVD (low-pressure chemical vapor deposition) WSi/sub 2/ to reduce the gate sheet resistance and selectively deposited LPCVD W to improve t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a14991e4e37ce5a3b56f3f90dac90da
https://doi.org/10.1109/iedm.1988.32933
https://doi.org/10.1109/iedm.1988.32933
Autor:
William Andrew Hennessy, M. Ghezzo, Michael S. Adler, C. S. Korman, H.-R. Chang, K. Shenai, V. Temple
Publikováno v:
International Technical Digest on Electron Devices.
Optimum low-voltage silicon power MOSFET technologies with forward conductivities approaching the silicon limit are presented. Vertical scaled trench power MOSFETs with measured performances of V/sub DB/=55 V (R/sub sp/=0.2 m Omega -cm/sup 2/, k/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c36c0b47d5fabd3967ebdb791d3bd7
https://doi.org/10.1109/iedm.1990.237042
https://doi.org/10.1109/iedm.1990.237042
Publikováno v:
1987 International Electron Devices Meeting.
P-channel, collector-shorted, vertical insulated gate bipolar transistors with hexagonal and square cell geometries were studied. The presence of the collector short, surrounding the edges of the device, resulted in a linear I-V region before the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea72c22a9aca67ee0b48e7e4d4d3baec
https://doi.org/10.1109/iedm.1987.191517
https://doi.org/10.1109/iedm.1987.191517