Zobrazeno 1 - 10
of 42
pro vyhledávání: '"William A, Kimes"'
Autor:
James Edgar Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent A. Sperling, Ravindra K. Kanjolia
Publikováno v:
Journal of Crystal Growth. 607:127102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6e02fb4c9f52a437e0d1ab4b7982402
https://doi.org/10.1016/j.jcrysgro.2023.127102
https://doi.org/10.1016/j.jcrysgro.2023.127102
Autor:
James E. Maslar, William A. Kimes, Albert V. Davydov, Ryan Beams, Elias Garratt, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Irina Kalish
Publikováno v:
Chemistry of Materials. 29:6279-6288
High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a783bc9515c2a82a93b97437611fbe5
https://doi.org/10.1021/acs.chemmater.7b01367
https://doi.org/10.1021/acs.chemmater.7b01367
Publikováno v:
Applied Spectroscopy. 71:2632-2642
A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9203f8e4980e28361b0e3d674c8b916
https://doi.org/10.1177/0003702817716939
https://doi.org/10.1177/0003702817716939
Publikováno v:
Applied spectroscopy. 74(10)
A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54348a2b0e2ec876e87d29de7785179
https://pubmed.ncbi.nlm.nih.gov/31617384
https://pubmed.ncbi.nlm.nih.gov/31617384
Publikováno v:
J Res Natl Inst Stand Technol
Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7eaad7fe5c7a6ada9de3444f8303657c
https://pubmed.ncbi.nlm.nih.gov/34877167
https://pubmed.ncbi.nlm.nih.gov/34877167
Publikováno v:
Journal of Vacuum Science & Technology A. 39:012403
Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high volatility liquid precursors, delivery of low volatility liquid and solid precursors can be probl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262814d70c4ec582f73617788ae4eef4
https://doi.org/10.1116/6.0000676
https://doi.org/10.1116/6.0000676
Autor:
Berc, Kalanyan, William A, Kimes, Ryan, Beams, Stephan J, Stranick, Elias, Garratt, Irina, Kalish, Albert V, Davydov, Ravindra K, Kanjolia, James E, Maslar
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 29(15)
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5a1560798e884ad32dcb3e49c6eb608a
https://pubmed.ncbi.nlm.nih.gov/29545674
https://pubmed.ncbi.nlm.nih.gov/29545674
Publikováno v:
Journal of Research of the National Institute of Standards and Technology
The design and operation of a simple, optically-accessible modular reactor for probing thermal thin film deposition processes, such as atomic layer deposition processes (ALD) and chemical vapor deposition (CVD), is described. This reactor has a nomin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb9b25803f9934565e321522a754c7c6
http://europepmc.org/articles/PMC4730684
http://europepmc.org/articles/PMC4730684
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P26-P31
In situ infrared (IR) spectroscopy has proven to be an extremely valuable tool for understanding various aspects of chemical vapor deposition (CVD) and atomic layer deposition (ALD). Solid film deposits, gaseous precursors and by-products, and growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e030112e56c9f469578c3ccff3f09ba9
https://doi.org/10.1149/2.009403jss
https://doi.org/10.1149/2.009403jss