Zobrazeno 1 - 10
of 23
pro vyhledávání: '"William, Po"'
Publikováno v:
Cells, Vol 10, Iss 5, p 1082 (2021)
Thyroid cancer is the most prevalent endocrine malignancy that comprises mostly indolent differentiated cancers (DTCs) and less frequently aggressive poorly differentiated (PDTC) or anaplastic cancers (ATCs) with high mortality. Utilisation of next-g
Externí odkaz:
https://doaj.org/article/d8b8b97947614614ae0bd9392be23fe3
Autor:
David Lynch, Branka Powter, Joseph William Po, Adam Cooper, Celine Garrett, Eng-Siew Koh, Mark Sheridan, James van Gelder, Balsam Darwish, Simon Mckechnie, Renata Bazina, Matthias Jaeger, Tara Laurine Roberts, Paul de Souza, Therese Maria Becker
Publikováno v:
Applied Sciences, Vol 10, Iss 9, p 3338 (2020)
Glioblastoma (GBM) is the most common form of primary brain cancer in adults and tissue biopsies for diagnostic purposes are often inaccessible. The postulated idea that brain cancer cells cannot pass the blood–brain barrier to form circulating tum
Externí odkaz:
https://doaj.org/article/e7fb1943928446858fc29782e897a83e
Autor:
William Po
Publikováno v:
Surgical Gynecology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449c2b876fcdfcce3b1c04b6d9d2a687
https://doi.org/10.1017/9781009003674.009
https://doi.org/10.1017/9781009003674.009
Autor:
Matt Vassar, Suhao Chen, Drew Wright, Ryan Ottwell, Holly Flores, nekita patel, William Po, Zhuqi Miao, Dhivya Kannan, Wade Arthur, Aaron Bowers, Micah Hartwell
Publikováno v:
Journal of Cancer Policy. 27:100268
Background While spin – i.e., a reporting practice that embellishes positive findings and understates negative ones – is prevalent in randomized controlled trials, it has yet to be investigated in the context of systematic reviews. Owing to their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2529e146a4ef56313447df3fe8c11d71
https://doi.org/10.1016/j.jcpo.2020.100268
https://doi.org/10.1016/j.jcpo.2020.100268
Autor:
William Po
Publikováno v:
Challenging Office Cases in Obstetrics and Gynecology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40048d6b890a74c8b0f2128f705d320
https://doi.org/10.5005/jp/books/12825_7
https://doi.org/10.5005/jp/books/12825_7
Autor:
Gary, Ventolini, Janice, Duke, William, Po, Sheela, Barhan, Debbie, Rhea, Cheryl, Desch, Niki, Istwan, Gary, Stanziano
Publikováno v:
The Journal of reproductive medicine. 53(9)
To examine the impact of maternal prepregnancy body mass index (BMI) on rates of recurrent preterm delivery (PTD) in women receiving 17alpha-hydroxyprogesterone caproate (17P) prophylaxis.The study population was identified from a large perinatal dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a6e4f9e3ec30989d653694f74c26bbdb
https://pubmed.ncbi.nlm.nih.gov/18839818
https://pubmed.ncbi.nlm.nih.gov/18839818
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144086d67c7445cc820d601976e18652
https://doi.org/10.7567/ssdm.2008.b-6-4
https://doi.org/10.7567/ssdm.2008.b-6-4
Autor:
Chenhsin Lien, Carlos H. Diaz, Ken-Ichi Goto, Chih-Huang Chang, J. S. Wang, Pin Su, William Po Nien Chen
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
In this work, a simplified BSIM-based model has been proposed to solve the above issues contributed by halo implants [Goto, K, et al., 2003]. In this new methodology, Rsd and mueff can be uniquely extracted in nano-scale devices. Furthermore, the ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f26eb312cefb45072a6f4c6ee5c778
https://doi.org/10.1109/vtsa.2006.251104
https://doi.org/10.1109/vtsa.2006.251104
Publikováno v:
Journal of The Electrochemical Society. 156:H34
As strained-silicon and ultrashallow junction USJ techniques are widely used to optimize the carrier velocity and parasitic resistances in metal oxide semiconductor field effect transistors MOSFETs, an accurate determination of the parasitic source/d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5952a8bca49c7bc4846561359266930
https://doi.org/10.1149/1.3005569
https://doi.org/10.1149/1.3005569
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