Zobrazeno 1 - 10
of 122
pro vyhledávání: '"Willi Volksen"'
Autor:
Scott G. Isaacson, Geraud Dubois, Krystelle Lionti, Yusuke Matsuda, Theo J. Frot, Reinhold H. Dauskardt, Willi Volksen
Publikováno v:
ACS Applied Materials & Interfaces. 10:27549-27554
Entanglements between polymer chains are responsible for the strength and toughness of polymeric materials. When the chains are too short to form entanglements, the polymer becomes weak and brittle. Here we show that molecular bridging of oligomers i
Autor:
Hilmar Koerner, Krystelle Lionti, Jeffery W. Baur, Geraud Dubois, Scott G. Isaacson, Jade I. Fostvedt, Reinhold H. Dauskardt, Willi Volksen
Publikováno v:
Nano Letters. 17:7040-7044
In this work, we exploit a confinement-induced molecular synthesis and a resulting bridging mechanism to create confined polyimide thermoset nanocomposites that couple molecular confinement-enhanced toughening with an unprecedented combination of hig
Publikováno v:
Microporous and Mesoporous Materials. 226:221-228
Adsorption processes are ubiquitous in nature as well as of great technological importance for gas separation, purification, storage and thermally driven heat pumps. This has led to a strong interest in the fundamental mechanisms governing adsorption
Publikováno v:
Scripta Materialia. 74:19-24
The fabrication of future interconnects in integrated circuits requires insulators with decreasing dielectric constants in order to maintain or improve the electrical performance of such devices. This is achieved through the introduction of air in th
Autor:
Krystelle Lionti, Bérangère Toury, Linying Cui, Reinhold H. Dauskardt, Willi Volksen, Geraud Dubois
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2013, 5 (21), pp.11276-11280. ⟨10.1021/am403506k⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2013, 5 (21), pp.11276-11280. ⟨10.1021/am403506k⟩
International audience; Transparent polymers are widely used in many 9 applications ranging from automotive windows to micro-10 electronics packaging. However, their intrinsic characteristics, 11 in particular their mechanical properties, are signifi
Autor:
Terry A. Spooner, Joe Lee, Alfred Grill, Huai Huang, Eric G. Liniger, B. Peethala, Willi Volksen, Hosadurga Shobha, Krystelle Lionti, Chao-Kun Hu, Griselda Bonilla, Theodorus E. Standaert, Donald F. Canaperi, Elbert E. Huang, Geraud Dubois, Teddie Magbitang, James Hsueh-Chung Chen, Daniel C. Edelstein
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Integration of high porosity low-k dielectrics faces major challenges as the porosity weakens the dielectric, resulting in severe plasma induced damage (PID) and difficulties in profile control. Post porosity plasma protection (P4) integration strate
Autor:
Teddie Magbitang, Krystelle Lionti, Scott G. Isaacson, Geraud Dubois, Reinhold H. Dauskardt, Willi Volksen, Can Wang
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Porous ultra-low-k (ULK) dielectrics hold promise for improving microprocessor performance, but these materials suffer from poor mechanical properties [1] and susceptibility to plasma damage during integration [2, 3). The post-porosity plasma protect
Autor:
Robert L. Bruce, Vaughn R. Deline, Sampath Purushothaman, Theo J. Frot, Teddie Magbitang, Willi Volksen, Geraud Dubois, Dolores C. Miller
Publikováno v:
Advanced Functional Materials. 22:3043-3050
Increasing the porosity of oxycarbosilane dielectrics is a key approach to lower the interconnect signal delay and thus enable manufacturing of lower power consumption and higher performance microprocessors. However, this path leads to excessive diel
Autor:
Geraud Dubois, Willi Volksen
Publikováno v:
Advanced Interconnects for ULSI Technology
From a historical point of view, the search for new low-k and ultra-low-k materials has always been dictated by industrial needs, resulting in a strong connection between fundamental research and technology. Although a variety of potential candidates
Publikováno v:
Chemical Reviews. 110:56-110