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Autor:
Jimmy Melskens, Roel J. Theeuwes, Lachlan E. Black, Wilhelmus M. M. Kessels, Willem-Jan H. Berghuis, Bart Macco, Paula C. P. Bronsveld
Publikováno v:
Physica Status Solidi : Rapid Research Letters, 15(1):2000399. Wiley-VCH Verlag
Phosphorus oxide (POx) capped by aluminum oxide (Al2O3), prepared by atomic layer deposition (ALD), has recently been introduced as a surface passivation scheme for planar n‐type FZ silicon. In this work, a fast pulsed‐flow plasma‐enhanced chem