Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Willem D. Van Driel"'
Autor:
Xiao Hu, Henry Antony Martin, René Poelma, Jianlin Huang, Hans van Rijckevorsel, Huib Scholten, Edsger Smits, Willem D. van Driel, Guoqi Zhang
Publikováno v:
Materials & Design, Vol 244, Iss , Pp 113185- (2024)
Resin-reinforced Ag sintering materials represent a promising solution for die-attach applications in high-power devices requiring enhanced reliability and heat dissipation. However, the presence of resin and intricate microstructure poses challenges
Externí odkaz:
https://doaj.org/article/40315f8e9310416d93e7a72c0fe6dac7
Publikováno v:
IEEE Access, Vol 12, Pp 42295-42315 (2024)
This study explores a novel approach to monitor the spectral emission of LEDs by estimating the spectral power distribution from the spectral sensor responses during an accelerated aging experiment. Two methods for reconstructing the actual LED spect
Externí odkaz:
https://doaj.org/article/a9df42e0f603492bb169be4bf5c79a24
Autor:
Alexander Herzog, Simon Benkner, Babak Zandi, Matteo Buffolo, Willem D. Van Driel, Matteo Meneghini, Tran Quoc Khanh
Publikováno v:
IEEE Access, Vol 11, Pp 19928-19940 (2023)
We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of ${\mathrm {365~ \text {n} \text {m} }}$ . The stress tests were carried out for a pe
Externí odkaz:
https://doaj.org/article/ab768cbf2079407582a02b8a143e721b
Publikováno v:
IEEE Access, Vol 10, Pp 83612-83619 (2022)
The unique radiative, photometric and colorimetric characteristic of a light-emitting diode is derived from its spectral power distribution. Modeling such characteristics with respect to the forward current, temperature or operating time has been sub
Externí odkaz:
https://doaj.org/article/92d298a94ce043a0a4c9f55d1152b04b
Publikováno v:
Sensors, Vol 10, Iss 4, Pp 3989-4001 (2010)
This paper discusses the assembly challenges considering the design and manufacturability of a Wafer Level Thin Film Package in MEMS applications. The assembly processes are discussed. The loads associated with these processes are illustrated and eva
Externí odkaz:
https://doaj.org/article/e8a9fdf412264fbbbc76cb78ce11aaf2
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c484b4bd3cbbe720ddf2eb6a60e21e3
https://doi.org/10.1109/mems49605.2023.10052401
https://doi.org/10.1109/mems49605.2023.10052401
Publikováno v:
Microelectronics Reliability, 119
It is known that quantitative measures for the reliability of software systems can be derived from software reliability models. And, as such, support the product development process. Over the past four decades, research activities in this area have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecbd7224e3372d3676f3478ba3df00f7
http://resolver.tudelft.nl/uuid:f89af593-f4e2-452c-9811-d88b9ddd477d
http://resolver.tudelft.nl/uuid:f89af593-f4e2-452c-9811-d88b9ddd477d
Publikováno v:
Microelectronics and Reliability : an International Journal and World Abstracting Service, 48(6), 833-842. Elsevier
Since recent years, micro-electronic industry changed the basic materials from Al/SiO 2 to Cu/low- k in IC interconnect structure. As a consequence, new reliability issues at device/product level has been discovered, and most of the failure modes hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5184be89a754e039286bda4cd6214d01
https://doi.org/10.1016/j.microrel.2008.03.024
https://doi.org/10.1016/j.microrel.2008.03.024
Autor:
Willem D. van Driel, Guoqi Zhang, Olaf van der Sluis, L.J. Ernst, Cadmus Yuan, Richard B. R. van Silfhout
Publikováno v:
Microelectronics and Reliability : an International Journal and World Abstracting Service, 47(9-11), 1483-1491. Elsevier
In this paper, the material stiffness of amorphous/porous low- k material and interfacial strength between amorphous silica and low- k have been simulated by the molecular dynamics (MD) methods. Due to the low stiffness of the low- k material, the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65d7bb560a41669b26d407ca2b981d69
https://doi.org/10.1016/j.microrel.2007.07.052
https://doi.org/10.1016/j.microrel.2007.07.052
Autor:
Jan-Dirk Kamminga, Willem D. van Driel, Paul F. A. Alkemade, Hozan Miro, Rene Kregting, Sander Gielen
Publikováno v:
11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE, 26-28 April 2010, Bordeaux, France
Intrinsic stresses in bondpads may lead to early failure of IC's. In order to determine the intrinsic stresses in semiconductor structures, a new procedure is set up. This procedure is a combined experimental/numerical approach which consists of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::200f78883f26241f828fb40b7676a601
https://doi.org/10.1109/esime.2010.5464520
https://doi.org/10.1109/esime.2010.5464520