Investigation of AlN/GaN Superlattices and their Application to Group III Nitride Devices

Autor: Wille, Ada

Publikováno v: Aachen 1 Online-Ressource (143 Seiten) : Illustrationen, Diagramme (2017). doi:10.18154/RWTH-2017-02683 = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2017

143 Seiten(2017).
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of the deposited layers. Stress does not only lead to relaxation of the material via defect incorporation but also destabilizes t

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Strain relief mechanisms and growth behavior of superlattice distributed Bragg reflectors.

Autor: Wille, Ada, Reuters, Benjamin, Finken, Matthias, Heyroth, Frank, Schmidt, Georg, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Publikováno v: Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p758-761, 4p