Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Willard E. Conley"'
Autor:
Willard E. Conley
Publikováno v:
Single Frequency Semiconductor Lasers.
It's has been the general opinion of device manufacturers that deep ultraviolet imaging will be the imaging method required to produce 250nm and sub-250nm geometry's for 256Mb-DRAM's and related logic technology. Traditional Mine lithography may not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa725b0533ca90f1ecdba64c9a634d96
https://doi.org/10.1117/12.2284082
https://doi.org/10.1117/12.2284082
Deep-UV lithography using 248- and 193-nm light will likely be the microlithography technology of choice for the manufacture of advanced memory and logic semiconductor devices for the next decade. Photoresists capable of exploiting these deep-UV wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57b2ad1413bfb96f0d8dfd6f8bda5b9
https://doi.org/10.1117/3.2265070.ch4
https://doi.org/10.1117/3.2265070.ch4
Autor:
Allen J. Bard, Robert J. LeSuer, Fu-Ren F. Fan, Willard E. Conley, Charles R. Chambers, J. Christopher Taylor, C. Grant Willson
Publikováno v:
Chemistry of Materials. 17:4194-4203
Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9682aa3128d1c672d1e28b3f86da8684
https://doi.org/10.1021/cm050294t
https://doi.org/10.1021/cm050294t
Autor:
C. Grant Willson, Shiro Kusumoto, Charles R. Chambers, Brian Osborn, Willard E. Conley, Brian C. Trinque, Robert H. Grubbs, Ryan P. Callahan, Geun Su Lee, Daniel P. Sanders
Publikováno v:
Journal of Fluorine Chemistry. 122:17-26
An overview of our 157 nm photoresist development activities is presented. Examination of the vacuum ultraviolet (VUV) absorbances of fluorinated monomers and polymers has provided knowledge that influenced copolymer design so that resist transparenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b16821a3efa6c5cb6e86158926d41ee
https://doi.org/10.1016/s0022-1139(03)00076-9
https://doi.org/10.1016/s0022-1139(03)00076-9
Autor:
Brian Osborn, Takashi Chiba, Paul Zimmerman, Brian C. Trinque, Yu Tsai Hsieh, Charles R. Chambers, C. Grant Willson, Daniel Miller, Willard E. Conley
Publikováno v:
Journal of Photopolymer Science and Technology. 15:583-590
The synthesis and characterization of several new fluoropolymers designed for use in the formulation of photoresists for exposure at 157nm will be described. The design of these resist platforms is based on learning from previously reported fluorine-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523df73d63edf78457ac23d37f55b2ef
https://doi.org/10.2494/photopolymer.15.583
https://doi.org/10.2494/photopolymer.15.583
Publikováno v:
Journal of The Electrochemical Society. 141:1034-1040
Current photospeed testing methods are based on dose to clear (E 0 ) or resist contrast (γ 10 ). Either method is inadequate for controlling sensitivity to within ±1.5%. We investigated various methods for improving these photospeed tests. Ranked i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da30147057b837de14f55af45b317c18
https://doi.org/10.1149/1.2054837
https://doi.org/10.1149/1.2054837
Autor:
Roderick R. Kunz, Willard E. Conley, Robert D. Allen, William D. Hinsberg, Gregory M. Wallraff
Publikováno v:
Journal of Photopolymer Science and Technology. 6:575-591
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4e2274deaa91eb490ef034137de72f
https://doi.org/10.2494/photopolymer.6.575
https://doi.org/10.2494/photopolymer.6.575
Autor:
Ranee Wai-Ling Kwong, Wayne M. Moreau, Warren Montgomery, William R. Brunsvold, Kevin M. Welsh, Harbans S. Sachdev, R. Kvitek, Willard E. Conley
Publikováno v:
Microelectronic Engineering. 13:19-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315dcc1fdc8e82c7237d131edf444da3
https://doi.org/10.1016/0167-9317(91)90039-g
https://doi.org/10.1016/0167-9317(91)90039-g
Autor:
Bernard J. Roman, Robert John Socha, Kurt E. Wampler, Patrick K. Montgomery, Kevin D. Lucas, Douglas Van Den Broeke, Christopher J. Progler, Lloyd C. Litt, J. Fung Chen, Michael E. Hathorn, Wei Wu, Willard E. Conley, Thomas Laidig, Bryan S. Kasprowicz
Publikováno v:
SPIE Proceedings.
Contact patterning for the 65nm device generation will be an exceedingly difficult task. The 2001 SIA roadmap lists the targeted contact size as 90nm with +/-10% CD control requirements of +/- 9nm 1 . Defectivity levels must also be below one failure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c1da5d3dbf0d6b293cb4c2fe3d375e
https://doi.org/10.1117/12.557755
https://doi.org/10.1117/12.557755
Autor:
Douglas Van Den Broeke, Willard E. Conley, Stephen Hsu, Robert John Socha, Uwe Hollerbach, Noel Corcoran, Kurt E. Wampler, Xuelong Shi, J. Fung Chen, Thomas Laidig
Publikováno v:
SPIE Proceedings.
The theory of interference mapping lithography (IML) is presented for low k1 (k1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::477639da404091bc6fda5d2a7307055e
https://doi.org/10.1117/12.557747
https://doi.org/10.1117/12.557747