Optical Simulation-Aided Design and Engineering of Monolithic Perovskite/Silicon Tandem Solar Cells

Autor: Yifeng Zhao, Kunal Datta, Nga Phung, Andrea E. A. Bracesco, Valerio Zardetto, Giulia Paggiaro, Hanchen Liu, Mohua Fardousi, Rudi Santbergen, Paul Procel Moya, Can Han, Guangtao Yang, Junke Wang, Dong Zhang, Bas T. van Gorkom, Tom P. A. van der Pol, Michael Verhage, Martijn M. Wienk, Wilhelmus M. M. Kessels, Arthur Weeber, Miro Zeman, Luana Mazzarella, Mariadriana Creatore, René A. J. Janssen, Olindo Isabella

Publikováno v: ACS Applied Energy Materials, 6(10), 5217-5229. American Chemical Society

Monolithic perovskite/c-Si tandem solar cells have attracted enormous research attention and have achieved efficiencies above 30%. This work describes the development of monolithic tandem solar cells based on silicon heterojunction (SHJ) bottom- and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56a1793e9bad06eaa0e34ca860860286
https://doi.org/10.1021/acsaem.3c00136

Hydrogenation of p+ poly-Si by Al2O3 nanolayers prepared by atomic layer deposition

Autor: Roel J. Theeuwes, Jimmy Melskens, Wolfhard Beyer, Uwe Breuer, Astrid Gutjahr, Agnes A. Mewe, Bart Macco, Wilhelmus M. M. Kessels

Publikováno v: Journal of Applied Physics, 133(14):145301. American Institute of Physics

Polysilicon (poly-Si) passivating contacts have enabled some of the highest lab-scale crystalline silicon (c-Si) solar cell conversion efficiencies, largely due to their excellent surface passivation quality, which can be aided by means of hydrogenat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19cddcdde3a56ac298a07320b2aa5d8d
https://research.tue.nl/nl/publications/888158bd-28ca-4d05-820e-3ae219ed61ec

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

Autor: Bart Macco, Wilhelmus J. H. Berghuis, Jimmy Melskens, Wolfhard Beyer, Lachlan E. Black, Dibyashree Koushik, Wilhelmus M. M. Kessels, Roel J. Theeuwes

Publikováno v: ACS applied electronic materials 3(10), 4337-4347 (2021). doi:10.1021/acsaelm.1c00516
ACS Applied Electronic Materials, 3(10), 4337-4347. American Chemical Society
ACS Applied Electronic Materials

Phosphorus oxide (PO x ) capped by aluminum oxide (Al2O3) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO x /Al2O3 stacks are gained thro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58262df52e7dcdff21014dcd0be360e0
https://research.tue.nl/en/publications/fc38303c-27b6-4324-a715-5a7238ba5f3d

On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Autor: Marcel A. Verheijen, Reyhaneh Mahlouji, Abhay A. Sagade, Yue Zhang, Jan P. Hofmann, Wilhelmus M. M. Kessels, Ageeth A. Bol

Publikováno v: ACS Applied Electronic Materials, 3(7), 3185-3199. American Chemical Society

Despite the extensive ongoing research on MoS2 field effect transistors(FETs), the key role of device processing conditions in the chemistry involved at the metalto-MoS2 interface and their influence on the electrical performance are often overlooked

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f568d711833f3952f01cdb7bf382063f
https://doi.org/10.1021/acsaelm.1c00379

Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiSx‑NbSx Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication

Autor: Marcel A. Verheijen, Matthew A. Bloodgood, Wilhelmus M. M. Kessels, Saravana Balaji Basuvalingam, Ageeth A. Bol

Publikováno v: ACS Applied Nano Materials, 4(1), 514-521. American Chemical Society
ACS Applied Nano Materials

The scalable and conformal synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is apersisting challenge for their implementation in next-generation devices.In this work, we report the synthesis of nanometer-thick

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c5ffc2e8e7849cf48f7300a84e37b50
https://doi.org/10.1021/acsanm.0c02820