Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wilhelmus J. H. Berghuis"'
Autor:
Bart Macco, Wilhelmus J. H. Berghuis, Jimmy Melskens, Wolfhard Beyer, Lachlan E. Black, Dibyashree Koushik, Wilhelmus M. M. Kessels, Roel J. Theeuwes
Publikováno v:
ACS applied electronic materials 3(10), 4337-4347 (2021). doi:10.1021/acsaelm.1c00516
ACS Applied Electronic Materials, 3(10), 4337-4347. American Chemical Society
ACS Applied Electronic Materials
ACS Applied Electronic Materials, 3(10), 4337-4347. American Chemical Society
ACS Applied Electronic Materials
Phosphorus oxide (PO x ) capped by aluminum oxide (Al2O3) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO x /Al2O3 stacks are gained thro
Autor:
Wilhelmus M. M. Kessels, Wilhelmus J. H. Berghuis, Bart Macco, B. W. H. van de Loo, Jimmy Melskens, Lachlan E. Black
Publikováno v:
Solar Energy Materials and Solar Cells, 188, 182-189. Elsevier
Despite the existence of several highly effective and well-characterized passivating materials for crystalline silicon surfaces, the topic of surface passivation and the investigation of new passivating materials remain of considerable interest for s
Autor:
Wilhelmus J. H. Berghuis, Marcel A. Verheijen, Bart Macco, Wilhelmus M. M. Kessels, Roel J. Theeuwes
Publikováno v:
ECS Meeting Abstracts. :625-625
Autor:
Wilhelmus J. H. Berghuis, Jimmy Melskens, Lachlan E. Black, Bart Macco, Marcel A. Verheijen, Wilhelmus M. M. Kessels, Roel J. Theeuwes
Publikováno v:
Journal of Applied Physics, 130(13):135303. American Institute of Physics
Surface passivation of germanium is vital for optimal performance of Ge based optoelectronic devices especially considering their rapidlyincreasing surface-to-volume ratios. In this work, we have investigated the surface passivation of Ge by a stack
Autor:
Wilhelmus M. M. Kessels, Wilhelmus J. H. Berghuis, Jimmy Melskens, Marcel A. Verheijen, Bart Macco, Saravana Balaji Basuvalingam
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 38(2):022408. AVS Science and Technology Society
Transparent conductive oxides form an important group of materials that combine high conductivity with high transparency. In this context, the authors designed an atomic layer deposition process for Nb-doped TiO2. The presented process enables accura
Autor:
J. H. Deijkers, Wilhelmus J. H. Berghuis, Saravana Balaji Basuvalingam, B. W. H. van de Loo, Bart Macco, Lachlan E. Black, Jimmy Melskens, Wilhelmus M. M. Kessels, Martin Hermle, Martin Bivour
Publikováno v:
Applied Physics Letters, 112(24):242105. American Institute of Physics
This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8eeec02edc6b564a12be19e50ca8f3be
https://research.tue.nl/nl/publications/6662b41b-18f5-4576-b7f9-a3548869f5b7
https://research.tue.nl/nl/publications/6662b41b-18f5-4576-b7f9-a3548869f5b7
Autor:
Berghuis, Wilhelmus J. H., Helmes, Max, Melskens, Jimmy, Theeuwes, Roel J., Kessels, Wilhelmus M. M., Macco, Bart
Publikováno v:
Journal of Applied Physics; 5/21/2022, Vol. 131 Issue 19, p1-15, 15p
Autor:
Berghuis, Wilhelmus J. H., Melskens, Jimmy, Macco, Bart, Theeuwes, Roel J., Black, Lachlan E., Verheijen, Marcel A., Kessels, Wilhelmus M. M.
Publikováno v:
Journal of Applied Physics; 10/7/2021, Vol. 130 Issue 13, p1-10, 10p
Publikováno v:
Applied Physics Letters; 8/28/2023, Vol. 123 Issue 9, p1-6, 6p