Výsledky vyhledávání - "Wilhelm Kegel"

High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation

Autor: Wilhelm Kegel, Malte Czernohorsky, Konrad Seidel, Wilfried Lerch, Nicole Sacher, Kati Kühnel, J. Niess

Publikováno v: Microelectronic Engineering

Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested. The oxides are compared to standard the

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Low temperature plasma oxidation for advanced 3D CMOS-based devices

Autor: Wilhelm Kegel, J. Niess, Wilfried Lerch

Publikováno v: physica status solidi (c)

The required temperature in semiconductor process technology is going towards two extreme directions. Either very high temperatures (up to 1300 °C) with very short durations on the order of milliseconds are required for highest dopant activation, or

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Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

Autor: Wilhelm Kegel, J. Niess, A. Gschwandtner, Fuccio Cristiano, J. Gelpey, Wilfried Lerch

Publikováno v: ECS Transactions
ECS Transactions, 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩
ECS Transactions, Electrochemical Society, Inc., 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩

The required temperature in semiconductor process technology is going in two extreme directions. Either very high temperatures (up to 1300°C) with very short durations on the order of milliseconds are required for highest dopant activation, or extre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e70205d8b09762e60955601cfb96443
https://hal.science/hal-01922632

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Sedimentation and tectonics in the rhenish geosyncline

Autor: Wilhelm Kegel

Publikováno v: Zeitschrift der Deutschen Geologischen Gesellschaft. 100:267-289

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https://doi.org/10.1127/zdgg/100/1948/267

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Lineament-Tektonik in Nordost-Brasilien

Autor: Wilhelm Kegel

Publikováno v: Geologische Rundschau. 54:1240-1260

An Hand einer Struktur-Karte von Nordost-Brasilien wird die tektonische Entwicklung des ostbrasilianischen und von Teilen des zentralbrasilianischen Schildes sowie der zwischen beiden gelegenen Sedimentarbecken dargestellt. Es wird die Bedeutung aufg

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https://doi.org/10.1007/bf01820778

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(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

Autor: Wilhelm Kegel, Malte Czernohorsky, Stefan Riedel, Wilfried Lerch, T. Schick, Jürgen Niess, Nicole Sacher

Publikováno v: ECS Transactions

Oxidation is a key process step in semiconductor device fabrication. Oxides are widely used in the production process as gate dielectrics, interfacial layers for high-k deposition, pad oxides, sacrificial oxides, screen oxides, protection oxides etc.

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