Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Wilfried Von Dr Ammon"'
Publikováno v:
Solid State Phenomena. :293-302
The coherent agglomeration of interstitial oxygen into single-plane and double-plane plates can explain the two peaks in the M-shaped nucleation curves in Czochralski silicon. The density of nucleation sites for the double-plane plates corresponds to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21811f2ec53384a592d4945d5da6086e
https://doi.org/10.4028/www.scientific.net/ssp.131-133.293
https://doi.org/10.4028/www.scientific.net/ssp.131-133.293
Publikováno v:
Solid State Phenomena. :655-662
The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 mcm) were measured by low temperature Fourier transform infrared (FTIR) spectroscopy. Therefor an alternative thinning technique for silicon is used: by alkaline p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99605697d309e8fff588824ca3c13c78
https://doi.org/10.4028/www.scientific.net/ssp.108-109.655
https://doi.org/10.4028/www.scientific.net/ssp.108-109.655
Autor:
Reinhold Wahlich, T. Müller, Wilfried Von Dr Ammon, Peter Krottenthaler, J. Studener, A. Kühhorn
Publikováno v:
Materials Science and Engineering: B. :235-240
We demonstrate a new model for simulating thermal and gravitational induced stress appearing in state of the art 300 mm argon annealing processes. Purpose of this work is to predict the allowable ramp rates in a vertical batch furnace system. The gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfa8018d703588aece75be21d1fe279
https://doi.org/10.1016/j.mseb.2005.08.103
https://doi.org/10.1016/j.mseb.2005.08.103
Autor:
G. Kissinger, Marc Weber, U. Lambert, Wilfried Von Dr Ammon, T. Müller, Andreas Dr. Dipl.-Phys. Huber, Andreas Sattler, Hans Richter, Peter Krottenthaler, Walter Dipl.-Phys. Dr. Häckl
Publikováno v:
Solid State Phenomena. :17-24
Nitrogen doping of CZ silicon results in an early formation of large precipitate nuclei during crystal cooling, which are stable at 900°C. These are prone to develop stacking faults and high densities of defects inside defect denuded zones of CZ sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b347abe278d3ba13f44509d2be36bce
https://doi.org/10.4028/www.scientific.net/ssp.108-109.17
https://doi.org/10.4028/www.scientific.net/ssp.108-109.17
Autor:
R. Wahlich, Christoph Seuring, Timo Müller, Peter Krottenthaler, G. Kissinger, Wilfried Von Dr Ammon
Publikováno v:
Solid State Phenomena. :11-16
Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584663ea593ed053bb43062e53c96f8f
https://doi.org/10.4028/www.scientific.net/ssp.108-109.11
https://doi.org/10.4028/www.scientific.net/ssp.108-109.11
Publikováno v:
Journal of Crystal Growth. 262:157-167
The paper presents an investigation of the turbulent flow features in a CZ crystal growth system with a horizontal DC magnetic field by 3D mathematical modelling. A laboratory model with InGaSn eutectic and with a 20″ crucible is considered. The mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ceea89e2789c00fefb802c99c4dac86
https://doi.org/10.1016/j.jcrysgro.2003.10.071
https://doi.org/10.1016/j.jcrysgro.2003.10.071
Autor:
Erich Dr Tomzig, A. Feodorov, L. Gorbunov, Wilfried Von Dr Ammon, Janis Virbulis, A. Pedchenko
Publikováno v:
Journal of Crystal Growth. 257:7-18
The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling liquid, employing actual criteria of the real process (Prandtl, Reynolds, Grashof numbers,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::143ffc7be0ff89a8190969ddf928d336
https://doi.org/10.1016/s0022-0248(03)01376-9
https://doi.org/10.1016/s0022-0248(03)01376-9
Publikováno v:
Solid State Phenomena. :105-110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9385fa684080f2de00f48c28967c6ff
https://doi.org/10.4028/www.scientific.net/ssp.95-96.105
https://doi.org/10.4028/www.scientific.net/ssp.95-96.105
Autor:
Markus Zschorsch, Hans Joachim Möller, Robert Dipl.-Chem. Dr. Hölzl, Herbert Rüfer, Wilfried Von Dr Ammon
Publikováno v:
Solid State Phenomena. :71-76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3035c37aeb66b7a3004a96ba2085bd2
https://doi.org/10.4028/www.scientific.net/ssp.95-96.71
https://doi.org/10.4028/www.scientific.net/ssp.95-96.71
Publikováno v:
Microelectronic Engineering. 66:234-246
The behavior of the ring-like distribution of oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski grown single silicon crystals was investigated as a function of the nitrogen and oxygen content. It was found that the inner and oute
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42acb18299c4c0a6a3f69eb38434cd32
https://doi.org/10.1016/s0167-9317(02)00910-3
https://doi.org/10.1016/s0167-9317(02)00910-3